Volume 45,
Number 1,
January 2005
- Tomasz Brozek:
Editorial.
1-2
Electronic Edition (link) BibTeX
- M. Houssa:
Modelling negative bias temperature instabilities in advanced p-MOSFETs.
3-12
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- Prasad Chaparala, Douglas Brisbin:
Impact of NBTI and HCI on PMOSFET threshold voltage drift.
13-18
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- Shyue Seng Tan, Tu Pei Chen, Chew Hoe Ang, Lap Chan:
Mechanism of nitrogen-enhanced negative bias temperature instability in pMOSFET.
19-30
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- Vijay Reddy, Anand T. Krishnan, Andrew Marshall, John Rodriguez, Sreedhar Natarajan, Tim Rost, Srikanth Krishnan:
Impact of negative bias temperature instability on digital circuit reliability.
31-38
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- Christian Schlünder, Ralf Brederlow, Benno Ankele, Wolfgang Gustin, Karl Goser, Roland Thewes:
Effects of inhomogeneous negative bias temperature stress on p-channel MOSFETs of analog and RF circuits.
39-46
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- Terence B. Hook, Ronald J. Bolam, William Clark, Jay S. Burnham, Nivo Rovedo, Laura Schutz:
Negative bias temperature instability on three oxide thicknesses (1.4/2.2/5.2 nm) with nitridation variations and deuteration.
47-56
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- Shinji Fujieda, Yoshinao Miura, Motofumi Saitoh, Yuden Teraoka, Akitaka Yoshigoe:
Characterization of interface defects related to negative-bias temperature instability in ultrathin plasma-nitrided SiON/Si<1 0 0> systems.
57-64
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- Shimpei Tsujikawa, Jiro Yugami:
Positive charge generation due to species of hydrogen during NBTI phenomenon in pMOSFETs with ultra-thin SiON gate dielectrics.
65-69
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- M. A. Alam, S. Mahapatra:
A comprehensive model of PMOS NBTI degradation.
71-81
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- V. Huard, M. Denais, F. Perrier, N. Revil, C. R. Parthasarathy, A. Bravaix, E. Vincent:
A thorough investigation of MOSFETs NBTI degradation.
83-98
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- Maxim Ershov, Sharad Saxena, Sean Minehane, P. Clifton, Mark Redford, R. Lindley, H. Karbasi, S. Graves, S. Winters:
Degradation dynamics, recovery, and characterization of negative bias temperature instability.
99-105
Electronic Edition (link) BibTeX
- Yung-Huei Lee, Steve Jacobs, Stefan Stadler, Neal Mielke, Ramez Nachman:
The impact of PMOST bias-temperature degradation on logic circuit reliability performance.
107-114
Electronic Edition (link) BibTeX
- Ninoslav Stojadinovic, I. Manic, V. Davidovic, D. Dankovic, S. Djoric-Veljkovic, S. Golubovic, S. Dimitrijev:
Effects of electrical stressing in power VDMOSFETs.
115-122
Electronic Edition (link) BibTeX
- E. Atanassova, R. V. Konakova, V. F. Mitin, J. Koprinarova, O. S. Lytvym, O. B. Okhrimenko, V. V. Schinkarenko, D. Virovska:
Effect of microwave radiation on the properties of Ta2O5-Si microstructures.
123-135
Electronic Edition (link) BibTeX
- Jian Chen, Jianbin Xu, K. Xue, J. An, Ning Ke, W. Cao, H. B. Xia, J. Shi, D. C. Tian:
Nanoscale structural characteristics and electron field emission properties of transition metal-fullerene compound TiC60 films.
137-142
Electronic Edition (link) BibTeX
- Y. C. Lin, X. Chen, Xingsheng Liu, Guo-Quan Lu:
Effect of substrate flexibility on solder joint reliability. Part II: finite element modeling.
143-154
Electronic Edition (link) BibTeX
- Ming-e Jing, Yue Hao, Jin-feng Zhang, Peijun Ma:
Efficient parametric yield optimization of VLSI circuit by uniform design sampling method.
155-162
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- Andrej Zemva, Baldomir Zajc:
Test generation for technology-specific multi-faults based on detectable perturbations.
163-173
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- E. Miranda, B. Brandala:
A function-fit model for the hard breakdown I-V characteristics of ultra-thin oxides in MOS structures.
175-178
Electronic Edition (link) BibTeX
- Cher Ming Tan, Zhenghao Gan, Wai Fung Ho, Sam Chen, Robert Liu:
Determination of the dice forward I-V characteristics of a power diode from a packaged device and its applications.
179-184
Electronic Edition (link) BibTeX
- Weifeng Sun, Longxing Shi:
Improving the yield and reliability of the bulk-silicon HV-CMOS by adding a P-well.
185-190
Electronic Edition (link) BibTeX
- P. A. Martínez Martínez, B. M. Monge Sanz:
Single resistance controlled oscillator using unity gain cells.
191-194
Electronic Edition (link) BibTeX
- Mile K. Stojcev:
Analog IP blocks.
195-196
Electronic Edition (link) BibTeX
- Mile K. Stojcev:
Layout-mixed-signal.
197-198
Electronic Edition (link) BibTeX
Volume 45,
Number 2,
February 2005
- Wolfgang Stadler:
Guest editorial.
199-200
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- Jeremy C. Smith, Gianluca Boselli:
A MOSFET power supply clamp with feedback enhanced triggering for ESD protection in advanced CMOS technologies.
201-210
Electronic Edition (link) BibTeX
- Michael Stockinger, James W. Miller, Michael G. Khazhinsky, Cynthia A. Torres, James C. Weldon, Bryan D. Preble, Martin J. Bayer, Matthew D. Akers, Vishnu G. Kamat:
Advanced rail clamp networks for ESD protection.
211-222
Electronic Edition (link) BibTeX
- Michael Chaine, James Davis, Al Kearney:
TLP analysis of 0.125 mum CMOS ESD input protection circuit.
223-231
Electronic Edition (link) BibTeX
- Florence Azaïs, B. Caillard, S. Dournelle, P. Salomé, Pascal Nouet:
A new multi-finger SCR-based structure for efficient on-chip ESD protection.
233-243
Electronic Edition (link) BibTeX
- Sami Hyvonen, Sopan Joshi, Elyse Rosenbaum:
Comprehensive ESD protection for RF inputs.
245-254
Electronic Edition (link) BibTeX
- Vesselin K. Vassilev, S. Thijs, P. L. Segura, P. Wambacq, Paul Leroux, Guido Groeseneken, M. I. Natarajan, H. E. Maes, Michiel Steyaert:
ESD-RF co-design methodology for the state of the art RF-CMOS blocks.
255-268
Electronic Edition (link) BibTeX
- Wolfgang Stadler, K. Esmark, K. Reynders, M. Zubeidat, M. Graf, Wolfgang Wilkening, J. Willemen, N. Qu, S. Mettler, M. Etherton:
Test circuits for fast and reliable assessment of CDM robustness of I/O stages.
269-277
Electronic Edition (link) BibTeX
- Heinrich Wolf, Horst A. Gieser, Wolfgang Stadler, Wolfgang Wilkening:
Capacitively coupled transmission line pulsing cc-TLP--a traceable and reproducible stress method in the CDM-domain.
279-285
Electronic Edition (link) BibTeX
- Andrew Olney, Brad Gifford, John Guravage, Alan Righter:
Real-world printed circuit board ESD failures.
287-295
Electronic Edition (link) BibTeX
- S. Bargstädt-Franke, Wolfgang Stadler, K. Esmark, M. Streibl, K. Domanski, Horst A. Gieser, Heinrich Wolf, W. Bala:
Transient latch-up: experimental analysis and device simulation.
297-304
Electronic Edition (link) BibTeX
- Al Wallash:
ESD SPICE model and measurements for a hard disk drive.
305-311
Electronic Edition (link) BibTeX
- M. Streibl, F. Zängl, K. Esmark, Robert Schwencker, Wolfgang Stadler, Harald Gossner, S. Drüen, Doris Schmitt-Landsiedel:
High abstraction level permutational ESD concept analysis.
313-321
Electronic Edition (link) BibTeX
- Steven H. Voldman:
A review of latchup and electrostatic discharge (ESD) in BiCMOS RF silicon germanium technologies: Part I - ESD.
323-340
Electronic Edition (link) BibTeX
- N. A. Hastas, N. Archontas, C. A. Dimitriadis, G. Kamarinos, T. Nikolaidis, N. Georgoulas, A. Thanailakis:
Substrate current and degradation of n-channel polycrystalline silicon thin-film transistors.
341-348
Electronic Edition (link) BibTeX
- Tsz Yin Man, Mansun Chan:
A 2-bit highly scalable nonvolatile memory cell with two electrically isolated charge trapping sites.
349-354
Electronic Edition (link) BibTeX
- P. C. Adell, R. D. Schrimpf, C. R. Cirba, W. T. Holman, X. Zhu, H. J. Barnaby, O. Mion:
Single event transient effects in a voltage reference.
355-359
Electronic Edition (link) BibTeX
- S. H. Choa:
Reliability of vacuum packaged MEMS gyroscopes.
361-369
Electronic Edition (link) BibTeX
- Chang-Lin Yeh, Yi-Shao Lai:
Transient analysis of the impact stage of wirebonding on Cu/low-K wafers.
371-378
Electronic Edition (link) BibTeX
- Daniel T. Rooney, DeePak Nager, David Geiger, Dongkai Shanguan:
Evaluation of wire bonding performance, process conditions, and metallurgical integrity of chip on board wire bonds.
379-390
Electronic Edition (link) BibTeX
- E. Misra, Md M. Islam, Mahbub Hasan, H. C. Kim, T. L. Alford:
Percolative approach for failure time prediction of thin film interconnects under high current stress.
391-395
Electronic Edition (link) BibTeX
- Vitezslav Benda:
A note on trap recombination in high voltage device structures.
397-401
Electronic Edition (link) BibTeX
- Mile K. Stojcev:
Data communication.
403-404
Electronic Edition (link) BibTeX
- Mile K. Stojcev:
Yale N. Patt and Sanjay J. Patel, Introduction to Computing Systems: From Bits and Gates to C and Beyond Second edition, McGraw-Hill Higher Education, Boston (2004) ISBN 0-07-121503-4 Softcover, pp 632, plus XXIV.
405-406
Electronic Edition (link) BibTeX
- Mile K. Stojcev:
Vadim Ivanov, Igor Filanovsky, Operational Amplifier Speed and Accuracy Improvement: Analog Circuit Design with Structural Methodology, Kluwer Academic Publishers, Boston, 2004, Hardcover, pp 194, plus XIV, ISBN 1-4020-7772-6.
407-408
Electronic Edition (link) BibTeX
Volume 45,
Numbers 3-4,
March-April 2005
- Joachim N. Burghartz:
Review of add-on process modules for high-frequency silicon technology.
409-418
Electronic Edition (link) BibTeX
- John S. Suehle, B. Zhu, Y. Chen, Joseph B. Bernstein:
Detailed study and projection of hard breakdown evolution in ultra-thin gate oxides.
419-426
Electronic Edition (link) BibTeX
- Bonnie E. Weir, Che-Choi Leung, Paul J. Silverman, Muhammad A. Alam:
Gate dielectric breakdown in the time-scale of ESD events.
427-436
Electronic Edition (link) BibTeX
- Steven H. Voldman:
A review of CMOS latchup and electrostatic discharge (ESD) in bipolar complimentary MOSFET (BiCMOS) Silicon Germanium technologies: Part II - Latchup.
437-455
Electronic Edition (link) BibTeX
- V. A. Vashchenko, P. Hopper:
Bipolar SCR ESD devices.
457-471
Electronic Edition (link) BibTeX
- Ji-hyuk Lim, Keon Kuk, Seung-joo Shin, Seog-soon Baek, Young-jae Kim, Jong-woo Shin, Yong-soo Oh:
Failure mechanisms in thermal inkjet printhead analyzed by experiments and numerical simulation.
473-478
Electronic Edition (link) BibTeX
- C. Petit, A. Meinertzhagen, D. Zander, O. Simonetti, M. Fadlallah, T. Maurel:
Low voltage SILC and P- and N-MOSFET gate oxide reliability.
479-485
Electronic Edition (link) BibTeX
- D. Goguenheim, A. Bravaix, S. Gomri, J. M. Moragues, C. Monserie, N. Legrand, P. Boivin:
Impact of wafer charging on hot carrier reliability and optimization of latent damage detection methodology in advanced CMOS technologies.
487-492
Electronic Edition (link) BibTeX
- I. Cortés, J. Roig, D. Flores, J. Urresti, S. Hidalgo, J. Rebollo:
Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile.
493-498
Electronic Edition (link) BibTeX
- Alessandro Marras, Ilaria De Munari, Davide Vescovi, Paolo Ciampolini:
Impact of gate-leakage currents on CMOS circuit performance.
499-506
Electronic Edition (link) BibTeX
- Ramana Murthy, Y. W. Chen, A. Krishnamoorthy, X. T. Chen:
SiLKTM etch optimization and electrical characterization for 0.13 mum interconnects.
507-516
Electronic Edition (link) BibTeX
- C. F. Tsang, C. K. Chang, A. Krishnamoorthy, K. Y. Ee, Y. J. Su, H. Y. Li, W. H. Li, L. Y. Wong:
A study of post-etch wet clean on electrical and reliability performance of Cu/low k interconnections.
517-525
Electronic Edition (link) BibTeX
- J. de Vries, J. van Delft, C. Slob:
100 mum Pitch flip chip on foil assemblies with adhesive interconnections.
527-534
Electronic Edition (link) BibTeX
- Ying Wang, Changchun Zhu, Chunyu Wu, Junhua Liu:
Improving reliability of beveled power semiconductor devices passivated by SIPOS.
535-539
Electronic Edition (link) BibTeX
- N. Nenadovic, V. Cuoco, S. J. C. H. Theeuwen, L. K. Nanver, H. Schellevis, G. Spierings, H. F. F. Jos, J. W. Slotboom:
Electrothermal characterization of silicon-on-glass VDMOSFETs.
541-550
Electronic Edition (link) BibTeX
- Ivan N. Ndip, Grit Sommer, Werner John, Herbert Reichl:
Characterization of bump arrays at RF/microwave frequencies.
551-558
Electronic Edition (link) BibTeX
- Yi Tao, Ajay P. Malshe:
Theoretical investigation on hermeticity testing of MEMS packages based on MIL-STD-883E.
559-566
Electronic Edition (link) BibTeX
- Tadanori Shimoto, Kazuhiro Baba, Koji Matsui, Jun Tsukano, Takehiko Maeda, Kenji Oyachi:
Ultra-thin high-density LSI packaging substrate for advanced CSPs and SiPs.
567-574
Electronic Edition (link) BibTeX
- Yi-Shao Lai, Tong Hong Wang:
Verification of submodeling technique in thermomechanical reliability assessment of flip-chip package assembly.
575-582
Electronic Edition (link) BibTeX
- L. Frisk, Eero Ristolainen:
Flip chip attachment on flexible LCP substrate using an ACF.
583-588
Electronic Edition (link) BibTeX
- M. J. Rizvi, Y. C. Chan, C. Bailey, H. Lu:
Study of anisotropic conductive adhesive joint behavior under 3-point bending.
589-596
Electronic Edition (link) BibTeX
- Hua Lu, Jesse Zhou, Rich Golek, Ming Zhou:
Hybrid reliability assessment for packaging prototyping.
597-609
Electronic Edition (link) BibTeX
- Dongsu Ryu, Seogweon Chang:
Novel concepts for reliability technology.
611-622
Electronic Edition (link) BibTeX
- L. Zhang, G. Subbarayan, B. C. Hunter, D. Rose:
Response surface models for efficient, modular estimation of solder joint reliability in area array packages.
623-635
Electronic Edition (link) BibTeX
- Jinwon Joo, Seungmin Cho, Bongtae Han:
Characterization of flexural and thermo-mechanical behavior of plastic ball grid package assembly using moiré interferometry.
637-646
Electronic Edition (link) BibTeX
- K. S. Kim, K. W. Ryu, C. H. Yu, J. M. Kim:
The formation and growth of intermetallic compounds and shear strength at Sn-Zn solder/Au-Ni-Cu interfaces.
647-655
Electronic Edition (link) BibTeX
- C. T. Pan, P. J. Cheng, M. F. Chen, C. K. Yen:
Intermediate wafer level bonding and interface behavior.
657-663
Electronic Edition (link) BibTeX
- Tuomas F. Waris, Markus P. K. Turunen, Tomi Laurila, Jorma K. Kivilahti:
Evaluation of electrolessly deposited NiP integral resistors on flexible polyimide substrate.
665-673
Electronic Edition (link) BibTeX
- Sam Siau, Johan De Baets, André Van Calster, Leon Heremans, Sammy Tanghe:
Processing quality results for electroless/electroplating of high-aspect ratio plated through holes in industrially produced printed circuit boards.
675-687
Electronic Edition (link) BibTeX
- Yi He:
Chemical and diffusion-controlled curing kinetics of an underfill material.
689-695
Electronic Edition (link) BibTeX
- T. Islam, C. Pramanik, H. Saha:
Modeling, simulation and temperature compensation of porous polysilicon capacitive humidity sensor using ANN technique.
697-703
Electronic Edition (link) BibTeX
- Sasa Radovanovic, Anne-Johan Annema, Bram Nauta:
Bandwidth of integrated photodiodes in standard CMOS for CD/DVD applications.
705-710
Electronic Edition (link) BibTeX
- Luke Maguire, Masud Behnia, Graham Morrison:
Systematic evaluation of thermal interface materials - a case study in high power amplifier design.
711-725
Electronic Edition (link) BibTeX
- Maria Teresa Sanz, Santiago Celma, Belén Calvo, Juan Pablo Alegre:
MOS current divider based PGA.
727-732
Electronic Edition (link) BibTeX
Volume 45,
Numbers 5-6,
May-June 2005
13th Workshop on Dielectrics in Microelectronics
- Paul Hurley:
Editorial.
767-769
Electronic Edition (link) BibTeX
- Gerald Lucovsky, J. C. Phillips:
Bond strain and defects at interfaces in high-k gate stacks.
770-778
Electronic Edition (link) BibTeX
- T. Schram, L.-Å. Ragnarsson, G. Lujan, W. Deweerd, J. Chen, W. Tsai, K. Henson, R. J. P. Lander, J. C. Hooker, J. Vertommen:
Performance improvement of self-aligned HfO2/TaN and SiON/TaN nMOS transistors.
779-782
Electronic Edition (link) BibTeX
- J.-P. Han, S. M. Koo, E. M. Vogel, Evgeni P. Gusev, C. D'Emic, C. A. Richter, J. S. Suehle:
Reverse short channel effects in high-k gated nMOSFETs.
783-785
Electronic Edition (link) BibTeX
- W. Deweerd, V. Kaushik, J. Chen, Y. Shimamoto, T. Schram, L.-Å. Ragnarsson, A. Delabie, L. Pantisano, B. Eyckens, J. W. Maes:
Potential remedies for the VT/Vfb-shift problem of Hf/polysilicon-based gate stacks: a solution-based survey.
786-789
Electronic Edition (link) BibTeX
- Udo Schwalke, Yordan Stefanov:
Process integration and nanometer-scale electrical characterization of crystalline high-k gate dielectrics.
790-793
Electronic Edition (link) BibTeX
- G. S. Lujan, W. Magnus, L.-Å. Ragnarsson, S. Kubicek, Stefan De Gendt, Marc M. Heyns, K. De Meyer:
Modelling mobility degradation due to remote Coulomb scattering from dielectric charges and its impact on MOS device performance.
794-797
Electronic Edition (link) BibTeX
- Vidya Kaushik, Martine Claes, Annelies Delabie, Sven Van Elshocht, Olivier Richard, Thierry Conard, Erika Rohr, Thomas Witters, Matty Caymax, Stefan De Gendt:
Observation and characterization of defects in HfO2 high-K gate dielectric layers.
798-801
Electronic Edition (link) BibTeX
- Y. G. Fedorenko, L. Truong, V. V. Afanasev, A. Stesmans, Z. Zhang, Stephen A. Campbell:
Impact of nitrogen incorporation on interface states in (100)Si/HfO2.
802-805
Electronic Edition (link) BibTeX
- Chadwin D. Young, Gennadi Bersuker, Yuegang Zhao, Jeff J. Peterson, Joel Barnett, George A. Brown, Jang H. Sim, Rino Choi, Byoung Hun Lee, Peter Zeitzoff:
Probing stress effects in HfO2 gate stacks with time dependent measurements.
806-810
Electronic Edition (link) BibTeX
- X. Blasco, M. Nafría, X. Aymerich, J. Pétry, Wilfried Vandervorst:
Breakdown spots of ultra-thin (EOT<1.5nm) HfO2/SiO2 stacks observed with enhanced - CAFM.
811-814
Electronic Edition (link) BibTeX
- J. Pétry, Wilfried Vandervorst, L. Pantisano, Robin Degraeve:
On the data interpretation of the C-AFM measurements in the characterization of thin insulating layers.
815-818
Electronic Edition (link) BibTeX
- Martin Lemberger, Albena Paskaleva, Stefan Zürcher, Anton J. Bauer, Lothar Frey, Heiner Ryssel:
Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor.
819-822
Electronic Edition (link) BibTeX
- L. Truong, Y. G. Fedorenko, V. V. Afanasev, A. Stesmans:
Admittance spectroscopy of traps at the interfaces of (100)Si with Al2O3, ZrO2, and HfO2.
823-826
Electronic Edition (link) BibTeX
- Gerald Lucovsky, J. G. Hong, C. C. Fulton, N. A. Stoute, Y. Zou, R. J. Nemanich, D. E. Aspnes, H. Ade, D. G. Schlom:
Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra.
827-830
Electronic Edition (link) BibTeX
- Pietro Delugas, Vincenzo Fiorentini:
Dielectric properties of two phases of crystalline lutetium oxide.
831-833
Electronic Edition (link) BibTeX
- Andreas Martin:
Reliability of gate dielectrics and metal-insulator-metal capacitors.
834-840
Electronic Edition (link) BibTeX
- G. Ribes, S. Bruyère, M. Denais, D. Roy, G. Ghibaudo:
Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown.
841-844
Electronic Edition (link) BibTeX
- F. Palumbo, G. Condorelli, S. Lombardo, K. L. Pey, C. H. Tung, L. J. Tang:
Structure of the oxide damage under progressive breakdown.
845-848
Electronic Edition (link) BibTeX
- D. Bauza, F. Rahmoune, R. Laqli, G. Ghibaudo:
On the SILC mechanism in MOSFET's with ultrathin oxides.
849-852
Electronic Edition (link) BibTeX
- Fernanda Irrera, Giuseppina Puzzilli, Domenico Caputo:
A comprehensive model for oxide degradation.
853-856
Electronic Edition (link) BibTeX
- G. Ghidini, M. Langenbuch, R. Bottini, D. Brazzelli, A. Ghetti, N. Galbiati, G. Giusto, A. Garavaglia:
Impact of interface and bulk trapped charges on transistor reliability.
857-860
Electronic Edition (link) BibTeX
- R. Fernández, R. Rodríguez, M. Nafría, X. Aymerich:
Influence of oxide breakdown position and device aspect ratio on MOSFET's output characteristics.
861-864
Electronic Edition (link) BibTeX
- E. Sleeckx, Marc Schaekers, X. Shi, E. Kunnen, B. Degroote, M. Jurczak, M. de Potter de ten Broeck, E. Augendre:
Optimization of low temperature silicon nitride processes for improvement of device performance.
865-868
Electronic Edition (link) BibTeX
- Robert O'Connor, Greg Hughes, Robin Degraeve, Ben Kaczer:
Progressive breakdown in ultrathin SiON dielectrics and its effect on transistor performance.
869-874
Electronic Edition (link) BibTeX
- M. Langenbuch, R. Bottini, M. E. Vitali, G. Ghidini:
In situ steam generation (ISSG) versus standard steam technology: impact on oxide reliability.
875-878
Electronic Edition (link) BibTeX
- A. Pecora, L. Maiolo, A. Bonfiglietti, M. Cuscunà, F. Mecarini, L. Mariucci, G. Fortunato, N. D. Young:
Silicon dioxide deposited by ECR-PECVD for low-temperature Si devices processing.
879-882
Electronic Edition (link) BibTeX
- C. Trapes, D. Goguenheim, A. Bravaix:
Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxides.
883-886
Electronic Edition (link) BibTeX
- J. Yang, J. J. Kopanski, A. Postula, M. Bialkowski:
Experimental investigation of the dielectric-semiconductor interface with scanning capacitance microscopy.
887-890
Electronic Edition (link) BibTeX
- D. Zander:
Comparison of interfaces states density through their energy distribution and LVSILC induced by uniform and localized injections in 2.3nm thick oxides.
891-894
Electronic Edition (link) BibTeX
- E. Spitale, D. Corso, I. Crupi, S. Lombardo, C. Gerardi:
Improvement of the P/E window in nanocrystal memories by the use of high-k materials in the control dielectric.
895-898
Electronic Edition (link) BibTeX
- Josep Carreras, B. Garrido, J. R. Morante:
Improved charge injection in Si nanocrystal non-volatile memories.
899-902
Electronic Edition (link) BibTeX
- V. I. Turchanikov, A. N. Nazarov, V. S. Lysenko, Josep Carreras, B. Garrido:
Charge storage peculiarities in poly-Si-SiO2-Si memory devices with Si nanocrystals rich SiO2.
903-906
Electronic Edition (link) BibTeX
- Fernanda Irrera, Giuseppina Puzzilli:
Crested barrier in the tunnel stack of non-volatile memories.
907-910
Electronic Edition (link) BibTeX
- N. Baboux, C. Plossu, P. Boivin:
Dynamic Fowler-Nordheim injection in EEPROM tunnel oxides at realistic time scales.
911-914
Electronic Edition (link) BibTeX
- R. Rölver, O. Winkler, M. Först, B. Spangenberg, H. Kurz:
Light emission from Si/SiO2 superlattices fabricated by RPECVD.
915-918
Electronic Edition (link) BibTeX
- C. M. Garner, G. Kloster, G. Atwood, L. Mosley, A. C. Palanduz:
Challenges for dielectric materials in future integrated circuit technologies.
919-924
Electronic Edition (link) BibTeX
- E. Deloffre, L. Montès, G. Ghibaudo, S. Bruyère, S. Blonkowski, S. Bécu, M. Gros-Jean, S. Crémer:
Electrical properties in low temperature range (5K-300K) of Tantalum Oxide dielectric MIM capacitors.
925-928
Electronic Edition (link) BibTeX
- J. M. Decams, H. Guillon, C. Jiménez, M. Audier, J. P. Sénateur, C. Dubourdieu, O. Cadix, B. J. O'Sullivan, M. Modreanu, P. K. Hurley:
Electrical characterization of HfO2 films obtained by UV assisted injection MOCVD.
929-932
Electronic Edition (link) BibTeX
- V. Mikhelashvili, B. Meyler, J. Shneider, O. Kreinin, G. Eisenstein:
Electrical properties of MIS capacitor using low temperature electron beam gun - evaporated HfAlO dielectrics.
933-936
Electronic Edition (link) BibTeX
- V. Capodieci, F. Wiest, T. Sulima, J. Schulze, I. Eisele:
Examination and evaluation of La2O3 as gate dielectric for sub-100nm CMOS and DRAM technology.
937-940
Electronic Edition (link) BibTeX
- A. Sibai, S. Lhostis, Y. Rozier, O. Salicio, S. Amtablian, C. Dubois, J. Legrand, J. P. Sénateur, M. Audier, L. Hubert-Pfalzgraff:
Characterization of crystalline MOCVD SrTiO3 films on SiO2/Si(100).
941-944
Electronic Edition (link) BibTeX
- U. Weber, M. Schumacher, J. Lindner, O. Boissière, P. Lehnen, S. Miedl, P. K. Baumann, G. Barbar, C. Lohe, T. McEntee:
AVD® technology for deposition of next generation devices.
945-948
Electronic Edition (link) BibTeX
- S. Dueñas, H. Castán, H. García, J. Barbolla, K. Kukli, J. Aarik, M. Ritala, M. Leskelä:
Electrical characterization of hafnium oxide and hafnium-rich silicate films grown by atomic layer deposition.
949-952
Electronic Edition (link) BibTeX
- M. C. Lemme, J. K. Efavi, H. D. B. Gottlob, T. Mollenhauer, T. Wahlbrink, H. Kurz:
Comparison of metal gate electrodes on MOCVD HfO2.
953-956
Electronic Edition (link) BibTeX
- Q. Fang, I. Liaw, M. Modreanu, P. K. Hurley, I. W. Boyd:
Post deposition UV-induced O2 annealing of HfO2 thin films.
957-960
Electronic Edition (link) BibTeX
- Fu-Chien Chiu, Shun-An Lin, Joseph Ya-min Lee:
Electrical properties of metal-HfO2-silicon system measured from metal-insulator-semiconductor capacitors and metal-insulator-semiconductor field-effect transistors using HfO2 gate dielectric.
961-964
Electronic Edition (link) BibTeX
- Y. Lu, Octavian Buiu, Steve Hall, P. K. Hurley:
Optical and electrical characterization of hafnium oxide deposited by MOCVD.
965-968
Electronic Edition (link) BibTeX
- Ming-Tsong Wang, Tsung-Hong Wang, Joseph Ya-min Lee:
Electrical conduction mechanism in high-dielectric-constant ZrO2 thin films.
969-972
Electronic Edition (link) BibTeX
- James Prendergast, Eoin O'Driscoll, Ed Mullen:
Investigation into the correct statistical distribution for oxide breakdown over oxide thickness range.
973-977
Electronic Edition (link) BibTeX
- S. Dueñas, H. Castán, H. García, J. Barbolla, E. San Andrés, I. Mártil, G. González-Díaz:
On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiNx/SiO2/Si fabricated by ECR-CVD.
978-981
Electronic Edition (link) BibTeX
- E. Halova, S. Alexandrova, A. Szekeres, M. Modreanu:
LPCVD-silicon oxynitride films: interface properties.
982-985
Electronic Edition (link) BibTeX
- V. Em. Vamvakas, D. Davazoglou:
Influence of the annealing temperature on the IR properties of SiO2 films grown from SiH4+O2.
986-989
Electronic Edition (link) BibTeX
- M. Vasilopoulou, A. M. Douvas, D. Kouvatsos, P. Argitis, D. Davazoglou:
Characterization of various insulators for possible use as low-k dielectrics deposited at temperatures below 200degreeC.
990-993
Electronic Edition (link) BibTeX
- Giacomo Barletta, Giuseppe Currò:
Junction leakage current degradation under high temperature reverse-bias stress induced by band-defect-band tunnelling in power VDMOS.
994-999
Electronic Edition (link) BibTeX
- S. A. Rushworth, L. M. Smith, A. J. Kingsley, R. Odedra, R. Nickson, P. Hughes:
Vapour pressure measurement of low volatility precursors.
1000-1002
Electronic Edition (link) BibTeX
- P. C. Juan, H. C. Chou, J. Y. M. Lee:
The effect of electrode material on the electrical conduction of metal-Pb(Zr0.53Ti0.47)O3-metal thin film capacitors.
1003-1006
Electronic Edition (link) BibTeX
- S. Beckx, M. Demand, S. Locorotondo, K. Henson, M. Claes, V. Paraschiv, D. Shamiryan, P. Jaenen, W. Boullart, S. Degendt:
Implementation of high-k and metal gate materials for the 45nm node and beyond: gate patterning development.
1007-1011
Electronic Edition (link) BibTeX
- Mile K. Stojcev:
Testing Static Random Access Memories: Defects, Fault Models and Test Patterns, Said Hamdioui, Kluwer Academic Publishers, Boston, 2004, Hardcover, pp 221, plus XX, ISBN 1-4020-7752-1.
1012-1013
Electronic Edition (link) BibTeX
- Mile K. Stojcev:
Behrouz A. Forouzan, Data Communications and Networking Third edition, McGraw-Hill Higher Education, Boston (2003) ISBN 0-07-251584-8 Softcover, pp 973, plus XXXIV.
1014-1016
Electronic Edition (link) BibTeX
- Mile K. Stojcev:
Boris Murmann, Bernhard Boser, Digitally Assisted Pipeline ADCs: Theory and Implementation, Kluwer Academic Publishers, Boston, 2004, ISBN 1-4020-7839-0. Hardcover, pp 155, plus XX.
1017-1018
Electronic Edition (link) BibTeX
- Mile K. Stojcev:
Carl Hamacher, Zvonko Vranesic, Safwat Zaky, Computer Organization, Fifth edition, 2004, ISBN 0-07-112214-4. Hardcover, pp 805, plus XX.
1019-1020
Electronic Edition (link) BibTeX
Volume 45,
Numbers 7-8,
July-August 2005
- Douglas Brisbin, Andy Strachan, Prasad Chaparala:
Optimizing the hot carrier reliability of N-LDMOS transistor arrays.
1021-1032
Electronic Edition (link) BibTeX
- D. Q. Kelly, S. Dey, D. Onsongo, S. K. Banerjee:
Considerations for evaluating hot-electron reliability of strained Si n-channel MOSFETs.
1033-1040
Electronic Edition (link) BibTeX
- Wataru Mizubayashi, Naoki Yasuda, Kenji Okada, Hiroyuki Ota, Hirokazu Hisamatsu, Kunihiko Iwamoto, Koji Tominaga, Katsuhiko Yamamoto, Tsuyoshi Horikawa, Toshihide Nabatame:
Carrier separation analysis for clarifying carrier conduction and degradation mechanisms in high-k stack gate dielectrics.
1041-1050
Electronic Edition (link) BibTeX
- Se Jong Rhee, Jack C. Lee:
Threshold voltage instability characteristics of HfO2 dielectrics n-MOSFETs.
1051-1060
Electronic Edition (link) BibTeX
- M. H. Lin, Y. L. Lin, K. P. Chang, K. C. Su, Tahui Wang:
Copper interconnect electromigration behaviors in various structures and lifetime improvement by cap/dielectric interface treatment.
1061-1078
Electronic Edition (link) BibTeX
- Guotao Wang, Paul S. Ho, Steven Groothuis:
Chip-packaging interaction: a critical concern for Cu/low k packaging.
1079-1093
Electronic Edition (link) BibTeX
- Andrea Chimenton, Piero Olivo:
Reliability of erasing operation in NOR-Flash memories.
1094-1108
Electronic Edition (link) BibTeX
- H. Aono, E. Murakami, K. Okuyama, A. Nishida, M. Minami, Y. Ooji, K. Kubota:
Modeling of NBTI saturation effect and its impact on electric field dependence of the lifetime.
1109-1114
Electronic Edition (link) BibTeX
- Shyue Seng Tan, Tu Pei Chen, Lap Chan:
Dynamic NBTI lifetime model for inverter-like waveform.
1115-1118
Electronic Edition (link) BibTeX
- Yao-Jen Lee, Tien-Sheng Chao, Tiao-Yuan Huang:
High voltage applications and NBTI effects of DT-pMOSFETS with reverse Schottky substrate contacts.
1119-1123
Electronic Edition (link) BibTeX
- Albena Paskaleva, Anton J. Bauer, Martin Lemberger:
Conduction mechanisms and an evidence for phonon-assisted conduction process in thin high-k HfxTiySizO films.
1124-1133
Electronic Edition (link) BibTeX
- H. Y. Li, Y. J. Su, C. F. Tsang, S. M. Sohan, V. N. Bliznetsov, L. Zhang:
Process improvement of 0.13mum Cu/Low K (Black DiamondTM) dual damascene interconnection.
1134-1143
Electronic Edition (link) BibTeX
- C. S. Ho, Kuo-Yin Huang, Ming Tang, Juin J. Liou:
An analytical threshold voltage model of NMOSFETs with hot-carrier induced interface charge effect.
1144-1149
Electronic Edition (link) BibTeX
- Y. J. Song, H. J. Joo, S. K. Kang, H. H. Kim, J. H. Park, Y. M. Kang, E. Y. Kang, S. Y. Lee, K. Kim:
Electrical properties of highly reliable 32Mb FRAM with advanced capacitor technology.
1150-1153
Electronic Edition (link) BibTeX
- A. R. Saha, S. Chattopadhyay, G. K. Dalapati, S. K. Nandi, C. K. Maiti:
An investigation of electrical and structural properties of Ni-germanosilicided Schottky diode.
1154-1160
Electronic Edition (link) BibTeX
- M. Estrada, A. Cerdeira, L. Resendiz, Benjamín Iñiguez, L. F. Marzal, J. Pallares:
Effect of localized traps on the anomalous behavior of the transconductance in nanocrystalline TFTs.
1161-1166
Electronic Edition (link) BibTeX
- Nicolas Valdaperez, Jean-Marc Routoure, Daniel Bloyet, Régis Carin, Serge Bardy:
Size effects on the DC characteristics and low frequency noise of double polysilicon NPN bipolar transistors.
1167-1173
Electronic Edition (link) BibTeX
- Peter Jacob, Uwe Thiemann, Joachim C. Reiner:
Electrostatic discharge directly to the chip surface, caused by automatic post-wafer processing.
1174-1180
Electronic Edition (link) BibTeX
- J. Urresti, S. Hidalgo, D. Flores, J. Roig, I. Cortés, J. Rebollo:
Lateral punch-through TVS devices for on-chip protection in low-voltage applications.
1181-1186
Electronic Edition (link) BibTeX
- Martin Sauter:
Determination of self-heating and thermal resistance in polycrystalline and bulk silicon resistors by DC measurements.
1187-1193
Electronic Edition (link) BibTeX
- Walter Smetana, Roland Reicher, H. Homolka:
Improving reliability of thick film initiators for automotive applications based on FE-analyses.
1194-1201
Electronic Edition (link) BibTeX
- H. Niemiec, A. Bulgheroni, M. Caccia, P. Grabiec, M. Grodner, M. Jastrzab, W. Kucewicz, K. Kucharski, S. Kuta, J. Marczewski:
Monolithic active pixel sensor realized in SOI technology - concept and verification.
1202-1207
Electronic Edition (link) BibTeX
- Masayuki Kitajima, Tadaaki Shono:
Reliability study of new SnZnAl lead-free solders used in CSP packages.
1208-1214
Electronic Edition (link) BibTeX
- Xiaowu Zhang, E. H. Wong, Ranjan Rajoo, Mahadevan K. Iyer, J. F. J. M. Caers, X. J. Zhao:
Development of process modeling methodology for flip chip on flex interconnections with non-conductive adhesives.
1215-1221
Electronic Edition (link) BibTeX
- Y. F. Yao, B. Njoman, K. H. Chua, T. Y. Lin:
New encapsulation development for fine pitch IC devices.
1222-1229
Electronic Edition (link) BibTeX
- Wenming Zhang, Guang Meng, Hongguang Li:
Electrostatic micromotor and its reliability.
1230-1242
Electronic Edition (link) BibTeX
- Sheng-Jen Hsieh, Sung-Ling Huang:
A methodology for microcontroller signal frequency stress prediction.
1243-1251
Electronic Edition (link) BibTeX
- M. Serényi, J. Betko, Á. Nemcsics, N. Q. Khanh, D. K. Basa, M. Morvic:
Study on the RF Sputtered hydrogenated amorphous silicon-germanium thin films.
1252-1256
Electronic Edition (link) BibTeX
- G. Janczyk:
Bipolar mechanisms present in short channel SOI-MOSFET transistors.
1257-1263
Electronic Edition (link) BibTeX
- Mansour Jaragh, Ahmed Hasswa:
Implementation, analysis and performance evaluation of the IRP replacement policy.
1264-1269
Electronic Edition (link) BibTeX
- Mile K. Stojcev:
Design of Energy-Efficient Application-Specific Instruction Set Processors (ASIPs), Tilman Glokler, Heinrich Meyr, Kluwer Academic Publishers, Boston, 2004, ISBN 1-4020-7730-0, Hardcover, pp 234, plus XX.
1270-1271
Electronic Edition (link) BibTeX
- Mile K. Stojcev:
Digital Computer Arithmetic Datapath Design Using Verilog HDL, James E. Stine, Kluwer Academic Publishers, Boston, 2004, ISBN 1-4020-7710-6. Hardcover, pp 180, plus XI.
1272
Electronic Edition (link) BibTeX
- Mile K. Stojcev:
Alberto Leon-Garcia, Indra Widjaja, Communication Networks: Fundamental Concepts and Key Architectures, Second edition, McGraw Hill Higher Education, Boston, 2004, ISBN 0-07-119848-2. Hardcover, pp 900, plus XXVII.
1273-1274
Electronic Edition (link) BibTeX
Volume 45,
Numbers 9-11,
September-November 2005
Proceedings of the 16th European Symposium on Reliability of Electron Devices,
Failure Physics and Analysis
- N. Labat:
Editorial.
1275-1276
Electronic Edition (link) BibTeX
- Etienne Sicard, J. M. Dienot:
Issues in electromagnetic compatibility of integrated circuits: emission and susceptibility.
1277-1284
Electronic Edition (link) BibTeX
- A. London:
Basic Principles for Managing Foundry Programs.
1285-1292
Electronic Edition (link) BibTeX
- Mauro Ciappa:
Lifetime prediction on the base of mission profiles.
1293-1298
Electronic Edition (link) BibTeX
- Y.-L. Li, Zs. Tökei, Ph. Roussel, Guido Groeseneken, Karen Maex:
Layout dependency induced deviation from Poisson area scaling in BEOL dielectric reliability.
1299-1304
Electronic Edition (link) BibTeX
- Changsoo Hong, Linda S. Milor, Munkang Choi, Tom Lin:
Study of Area Scaling Effect on Integrated Circuit Reliability Based on Yield Models.
1305-1310
Electronic Edition (link) BibTeX
- Shih-Hung Chen, Ming-Dou Ker:
Investigation on seal-ring rules for IC product reliability in 0.25-mum CMOS technology.
1311-1316
Electronic Edition (link) BibTeX
- J. Y. Seo, K. J. Lee, Y. S. Kim, S. Y. Lee, S. J. Hwang, C. K. Yoon:
Reliability for Recessed Channel Structure n-MOSFET.
1317-1320
Electronic Edition (link) BibTeX
- G. Cassanelli, G. Mura, F. Cesaretti, Massimo Vanzi, Fausto Fantini:
Reliability predictions in electronic industrial applications.
1321-1326
Electronic Edition (link) BibTeX
- A. Kerlain, V. Mosser:
Robust, versatile, direct low-frequency noise characterization method for material/process quality control using cross-shaped 4-terminal devices.
1327-1330
Electronic Edition (link) BibTeX
- Ling-Chang Hu, An-Chi Kang, Eric Chen, J. R. Shih, Yao-Feng Lin, Kenneth Wu, Ya-Chin King:
Gate stress effect on low temperature data retention characteristics of split-gate flash memories.
1331-1336
Electronic Edition (link) BibTeX
- G. Ghidini, C. Capolupo, G. Giusto, A. Sebastiani, B. Stragliati, M. Vitali:
Tunnel oxide degradation under pulsed stress.
1337-1342
Electronic Edition (link) BibTeX
- Ninoslav Stojadinovic, D. Dankovic, S. Djoric-Veljkovic, V. Davidovic, I. Manic, S. Golubovic:
Negative bias temperature instability mechanisms in p-channel power VDMOSFETs.
1343-1348
Electronic Edition (link) BibTeX
- Yannick Rey-Tauriac, J. Badoc, B. Reynard, R. A. Bianchi, D. Lachenal, A. Bravaix:
Hot-carrier reliability of 20V MOS transistors in 0.13 mum CMOS technology.
1349-1354
Electronic Edition (link) BibTeX
- M. Nelhiebel, J. Wissenwasser, Th. Detzel, A. Timmerer, E. Bertagnolli:
Hydrogen-related influence of the metallization stack on characteristics and reliability of a trench gate oxide.
1355-1359
Electronic Edition (link) BibTeX
- J. Y. Seo, K. J. Lee, S. Y. Lee, S. J. Hwang, C. K. Yoon:
Dielectric reliability of stacked Al2O3-HfO2 MIS capacitors with cylinder type for improving DRAM data retention characteristics.
1360-1364
Electronic Edition (link) BibTeX
- E. Miranda, J. Molina, Y. Kim, H. Iwai:
Degradation of high-K LA2O3 gate dielectrics using progressive electrical stress.
1365-1369
Electronic Edition (link) BibTeX
- A. Bravaix, D. Goguenheim, M. Denais, V. Huard, C. R. Parthasarathy, F. Perrier, N. Revil, E. Vincent:
Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs.
1370-1375
Electronic Edition (link) BibTeX
- K. Hayama, K. Takakura, H. Ohyama, S. Kuboyama, S. Matsuda, J. M. Rafí, A. Mercha, E. Simoen, C. Claeys:
Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs.
1376-1381
Electronic Edition (link) BibTeX
- Enjun Xiao, P. P. Ghosh, C. Yu, J. S. Yuan:
Hot carrier and soft breakdown effects on LNA performance for ultra wideband communications.
1382-1385
Electronic Edition (link) BibTeX
- M. A. Exarchos, G. J. Papaioannou, J. Jomaah, F. Balestra:
The impact of static and dynamic degradation on SOI "smart-cut" floating body MOSFETs.
1386-1389
Electronic Edition (link) BibTeX
- L. Aguilera, M. Porti, M. Nafría, X. Aymerich:
Pre- and post-BD electrical conduction of stressed HfO2/SiO2 MOS gate stacks observed at the nanoscale.
1390-1393
Electronic Edition (link) BibTeX
- Jin-Wook Lee, Gyoung Ho Buh, Guk-Hyon Yon, Tai-su Park, Yu Gyun Shin, U-In Chung, Joo Tae Moon:
Elimination of surface state induced edge transistors in high voltage NMOSFETs for flash memory devices.
1394-1397
Electronic Edition (link) BibTeX
- Jae-Seong Jeong, Jae-Hyun Lee, Jong-Shin Ha, Sang-Deuk Park:
Stress Mechanism about Field Lightning Surge of High Voltage BJT Based Line Driver for ADSL System.
1398-1401
Electronic Edition (link) BibTeX
- Chuanzhao Yu, Enjun Xiao, J. S. Yuan:
Voltage stress-induced hot carrier effects on SiGe HBT VCO.
1402-1405
Electronic Edition (link) BibTeX
- G. Boselli, C. Duvvury:
Trends and challenges to ESD and Latch-up designs for nanometer CMOS technologies.
1406-1414
Electronic Edition (link) BibTeX
- N. Guitard, F. Essely, D. Trémouilles, M. Bafleur, N. Nolhier, Philippe Perdu, A. Touboul, V. Pouget, D. Lewis:
Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure.
1415-1420
Electronic Edition (link) BibTeX
- Heinrich Wolf, Horst A. Gieser, Wolfgang Soldner, Harald Gossner:
A Dedicated TLP Set-Up to Investigate the ESD Robustness of RF Elements and Circuits.
1421-1424
Electronic Edition (link) BibTeX
- M. S. B. Sowariraj, Theo Smedes, Peter C. de Jong, Cora Salm, Ton J. Mouthaan, Fred G. Kuper:
A 3-D Circuit Model to evaluate CDM performance of ICs.
1425-1429
Electronic Edition (link) BibTeX
- Vesselin K. Vassilev, V. A. Vashchenko, Ph. Jansen, Guido Groeseneken, M. ter Beek:
ESD circuit model based protection network optimisation for extended-voltage NMOS drivers.
1430-1435
Electronic Edition (link) BibTeX
- Zs. Tökei, Y.-L. Li, G. P. Beyer:
Reliability challenges for copper low-k dielectrics and copper diffusion barriers.
1436-1442
Electronic Edition (link) BibTeX
- Arijit Roy, Cher Ming Tan, Rakesh Kumar, Xian Tong Chen:
Effect of test condition and stress free temperature on the electromigration failure of Cu dual damascene submicron interconnect line-via test structures.
1443-1448
Electronic Edition (link) BibTeX
- Cher Ming Tan, Arijit Roy, Kok Tong Tan, Derek Sim Kwang Ye, Frankie Low:
Effect of vacuum break after the barrier layer deposition on the electromigration performance of aluminum based line interconnects.
1449-1454
Electronic Edition (link) BibTeX
- Jong Hun Kim, Kyosun Kim, Seok Hee Jeon, Jong-Tae Park:
Reliability improvement by the suppression of keyhole generation in W-plug vias.
1455-1458
Electronic Edition (link) BibTeX
- Kevin Sanchez, Romain Desplats, Felix Beaudoin, Philippe Perdu, J. P. Roux, G. Woods, D. Lewis:
NIR laser stimulation for dynamic timing analysis.
1459-1464
Electronic Edition (link) BibTeX
- Abdellatif Firiti, Felix Beaudoin, G. Haller, Philippe Perdu, D. Lewis, P. Fouillat:
Impact of semiconductors material on IR Laser Stimulation signal.
1465-1470
Electronic Edition (link) BibTeX
- Stas Polonsky, M. Bhushan, A. Gattiker, Alan J. Weger, Peilin Song:
Photon emission microscopy of inter/intra chip device performance variations.
1471-1475
Electronic Edition (link) BibTeX
- M. Remmach, A. Pigozzi, Romain Desplats, Philippe Perdu, D. Lewis, J. Noel, S. Dudit:
Light Emission to Time Resolved Emission For IC Debug and Failure Analysis.
1476-1481
Electronic Edition (link) BibTeX
- Stéphane Grauby, M. Amine Salhi, Wilfrid Claeys, D. Trias, Stefan Dilhaire:
ElectroStatic Discharge Fault Localization by Laser Probing.
1482-1486
Electronic Edition (link) BibTeX
- Sanjib Kumar Brahma, Christian Boit, Arkadiusz Glowacki:
Seebeck Effect Detection on Biased Device without OBIRCH Distortion Using FET Readout.
1487-1492
Electronic Edition (link) BibTeX
- Alberto Tosi, Franco Stellari, F. Zappa:
Innovative packaging technique for backside optical testing of wire-bonded chips.
1493-1498
Electronic Edition (link) BibTeX
- Marco Buzzo, Mauro Ciappa, Maria Stangoni, Wolfgang Fichtner:
Two-dimensional Dopant Profiling and Imaging of 4H Silicon Carbide Devices by Secondary Electron Potential Contrast.
1499-1504
Electronic Edition (link) BibTeX
- C. Hartmann, W. Mertin, G. Bacher:
Circuit-internal signal measurements with a needle sensor.
1505-1508
Electronic Edition (link) BibTeX
- M. Grützner:
Advanced electrical analysis of embedded memory cells using atomic force probing.
1509-1513
Electronic Edition (link) BibTeX
- C. De Nardi, Romain Desplats, Philippe Perdu, Felix Beaudoin, J.-L. Gauffier:
Oxide charge measurements in EEPROM devices.
1514-1519
Electronic Edition (link) BibTeX
- G. Neumann, J. Touzel, R. Duschl:
Localization and physical analysis of dielectric weaknesses for state-of-the-art deep trench based DRAM products.
1520-1525
Electronic Edition (link) BibTeX
- M.-A. Iannello, L. Tsung:
STEM role in failure analysis.
1526-1531
Electronic Edition (link) BibTeX
- Maria Stangoni, Mauro Ciappa, Wolfgang Fichtner:
Assessment of the Analytical Capabilities of Scanning Capacitance and Scanning Spreading Resistance Microscopy Applied to Semiconductor Devices.
1532-1537
Electronic Edition (link) BibTeX
- Felix Beaudoin, Kevin Sanchez, Romain Desplats, Philippe Perdu, J. M. Nicot, J. P. Roux, M. Otte:
Dynamic Laser Stimulation Case Studies.
1538-1543
Electronic Edition (link) BibTeX
- Rudolf Schlangen, Uwe Kerst, A. Kabakow, Christian Boit:
Electrical Performance Evaluation of FIB Edited Circuits through Chip Backside Exposing Shallow Trench Isolations.
1544-1549
Electronic Edition (link) BibTeX
- Franco Stellari, Peilin Song, John Hryckowian, Otto A. Torreiter, Steve Wilson, Philip Wu, Alberto Tosi:
Characterization of a 0.13 mum CMOS Link Chip using Time Resolved Emission (TRE).
1550-1553
Electronic Edition (link) BibTeX
- J. Y. Liao, G. L. Woods, X. Chen, H. L. Marks:
Localization of Marginal Circuits for Yield Diagnostics Utilizing a Dynamic Laser Stimulation Probing System.
1554-1557
Electronic Edition (link) BibTeX
- U. Muehle, A. Lenk, R. Weiland, H. Lichte:
Characterisation of dopants distribution using electron holography and FIB-based lift-off preparation.
1558-1561
Electronic Edition (link) BibTeX
- F. Sibileau, C. Ali, C. Giret, D. Faure:
SRAM cell defect isolation methodology by sub micron probing technique.
1562-1567
Electronic Edition (link) BibTeX
- Peter Breitschopf, Guenther Benstetter, Bernhard Knoll, Werner Frammelsberger:
Intermittent contact scanning capacitance microscopy-An improved method for 2D doping profiling.
1568-1571
Electronic Edition (link) BibTeX
- Cher Ming Tan, Kim Peng Lim, Tai Chong Chai, Guat Cheng Lim:
Non-destructive identification of open circuit in wiring on organic substrate with high wiring density covered with solder resist.
1572-1575
Electronic Edition (link) BibTeX
- S. Barberan, E. Auvray:
Die repackaging for failure analysis.
1576-1580
Electronic Edition (link) BibTeX
- Ruggero Pintus, Simona Podda, Massimo Vanzi:
Image alignment for 3D reconstruction in a SEM.
1581-1584
Electronic Edition (link) BibTeX
- G. Verzellesi, Gaudenzio Meneghesso, A. Chini, Enrico Zanoni, C. Canali:
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues.
1585-1592
Electronic Edition (link) BibTeX
- S. Huyghe, L. Béchou, N. Zerounian, Y. Deshayes, F. Aniel, A. Denolle, D. Laffitte, J. L. Goudard, Y. Danto:
Electroluminescence spectroscopy for reliability investigations of 1.55 mum bulk semiconductor optical amplifier.
1593-1599
Electronic Edition (link) BibTeX
- Cezary Sydlo, J. Sigmund, Bastian Mottet, Hans L. Hartnagel:
Reliability investigations on LTG-GaAs photomixers for THz generation based on optical heterodyning.
1600-1604
Electronic Edition (link) BibTeX
- P. Cova, N. Delmonte, Roberto Menozzi:
On state breakdown in PHEMTs and its temperature dependence.
1605-1610
Electronic Edition (link) BibTeX
- N. Ismail, N. Malbert, N. Labat, A. Touboul, J. L. Muraro, F. Brasseau, D. Langrez:
Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions.
1611-1616
Electronic Edition (link) BibTeX
- A. Sozza, C. Dua, E. Morvan, B. Grimber, S. L. Delage:
A 3000 hours DC Life Test on AlGaN/GaN HEMT for RF and microwave applications.
1617-1621
Electronic Edition (link) BibTeX
- O. Pajona, Christelle Aupetit-Berthelemot, R. Lefevre, Jean-Michel Dumas:
Performances and limitations analyses of PHEMT and MHEMT for applications in high bit rate fiber-optic systems.
1622-1625
Electronic Edition (link) BibTeX
- H. A. Post, P. Letullier, T. Briolat, R. Humke, R. Schuhmann, K. Saarinen, W. Werner, Y. Ousten, G. Lekens, A. Dehbi:
Failure mechanisms and qualification testing of passive components.
1626-1632
Electronic Edition (link) BibTeX
- W. D. van Driel, M. A. J. van Gils, R. B. R. van Silfhout, G. Q. Zhang:
Prediction of Delamination Related IC & Packaging Reliability Problems.
1633-1638
Electronic Edition (link) BibTeX
- D. Abessolo-Bidzo, P. Poirier, Ph. Descamps, B. Domengès:
Isolating failing sites in IC packages using time domain reflectometry: Case studies.
1639-1644
Electronic Edition (link) BibTeX
- Isaline Richard, Romain Fayolle, Jean-Claude Lecomte:
New experimental approach for failure prediction in electronics: Topography and deformation measurement complemented with acoustic microscopy.
1645-1651
Electronic Edition (link) BibTeX
- A. Guédon-Gracia, E. Woirgard, C. Zardini:
Correlation between Experimental Results and FE Simulations to Evaluate Lead-Free BGA Assembly Reliability.
1652-1657
Electronic Edition (link) BibTeX
- A. Dehbi, Y. Ousten, Y. Danto, W. Wondrak:
Vibration lifetime modelling of PCB assemblies using steinberg model.
1658-1661
Electronic Edition (link) BibTeX
- Kirsten Weide-Zaage, Walter Horaud, Hélène Frémont:
Moisture diffusion in Printed Circuit Boards: Measurements and Finite- Element- Simulations.
1662-1667
Electronic Edition (link) BibTeX
- K. C. Lee, A. Vythilingam, P. Alpern:
A simple moisture diffusion model for the prediction of optimal baking schedules for plastic SMD packages.
1668-1671
Electronic Edition (link) BibTeX
- T. Braun, K.-F. Becker, M. Koch, V. Bader, Rolf Aschenbrenner, Herbert Reichl:
Reliability Potential Of Epoxy Based Encapsulants For Automotive Applications.
1672-1675
Electronic Edition (link) BibTeX
- J. Vobecký, D. Kolesnikov:
Reliability of Contacts for Press-Pack High-Power Devices.
1676-1681
Electronic Edition (link) BibTeX
- Masanori Usui, Masayasu Ishiko, Koji Hotta, Satoshi Kuwano, Masato Hashimoto:
Effects of uni-axial mechanical stress on IGBT characteristics.
1682-1687
Electronic Edition (link) BibTeX
- M. Heer, V. Dubec, M. Blaho, Scrgey Bychikhin, Dionyz Pogany, E. Gornik, M. Denison, M. Stecher, G. Groos:
Automated setup for thermal imaging and electrical degradation study of power DMOS devices.
1688-1693
Electronic Edition (link) BibTeX
- Mauro Ciappa, Wolfgang Fichtner, T. Kojima, Y. Yamada, Y. Nishibe:
Extraction of Accurate Thermal Compact Models for Fast Electro-Thermal Simulation of IGBT Modules in Hybrid Electric Vehicles.
1694-1699
Electronic Edition (link) BibTeX
- S. Azzopardi, A. Benmansour, M. Ishiko, E. Woirgard:
Assessment of the Trench IGBT reliability: low temperature experimental characterization.
1700-1705
Electronic Edition (link) BibTeX
- A. Irace, G. Breglio, P. Spirito, Romeo Letor, Sebastiano Russo:
Reliability enhancement with the aid of transient infrared thermal analysis of smart Power MOSFETs during short circuit operation.
1706-1710
Electronic Edition (link) BibTeX
- G. Busatto, A. Porzio, F. Velardi, F. Iannuzzo, A. Sanseverino, G. Currò:
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET.
1711-1716
Electronic Edition (link) BibTeX
- B. Khong, P. Tounsi, Ph. Dupuy, X. Chauffleur, M. Legros, A. Deram, C. Levade, G. Vanderschaeve, J. M. Dorkel, J. P. Fradin:
Innovative Methodology for Predictive Reliability of Intelligent Power Devices Using Extreme Electro-thermal Fatigue.
1717-1722
Electronic Edition (link) BibTeX
- Cher Ming Tan, Joe Chiu, Robert Liu, Guan Zhang:
Reliability screening through electrical testing for press-fit alternator power diode in automotive application.
1723-1727
Electronic Edition (link) BibTeX
- C. O. Maïga, Hamid Toutah, Boubekeur Tala-Ighil, B. Boudart:
Trench insulated gate bipolar transistors submitted to high temperature bias stress.
1728-1731
Electronic Edition (link) BibTeX
- M. A. Belaïd, K. Ketata, K. Mourgues, H. Maanane, M. Masmoudi, J. Marcon:
Comparative analysis of accelerated ageing effects on power RF LDMOS reliability.
1732-1737
Electronic Edition (link) BibTeX
- Francesco Iannuzzo:
Non-destructive Testing Technique for MOSFET's Characterisation during Soft-Switching ZVS Operations.
1738-1741
Electronic Edition (link) BibTeX
- A. Tazzoli, Gaudenzio Meneghesso, Enrico Zanoni:
A novel fast and versatile temperature measurement system for LDMOS transistors.
1742-1745
Electronic Edition (link) BibTeX
- W. Lajnef, J.-M. Vinassa, O. Briat, E. Woirgard:
Specification and use of pulsed current profiles for ultracapacitors power cycling.
1746-1749
Electronic Edition (link) BibTeX
- Jeremy A. Walraven:
Failure Analysis Issues in Microelectromechanical Systems (MEMS).
1750-1757
Electronic Edition (link) BibTeX
- F. Cacchione, A. Corigliano, B. De Masi, C. Riva:
Out of plane vs in plane flexural behaviour of thin polysilicon films: Mechanical characterization and application of the Weibull approach.
1758-1763
Electronic Edition (link) BibTeX
- D. Veyrié, D. Lellouchi, J.-L. Roux, F. Pressecq, A. Tetelin, C. Pellet:
FTIR spectroscopy for the hermeticity assessment of micro-cavities.
1764-1769
Electronic Edition (link) BibTeX
- S. Mellé, D. De Conto, L. Mazenq, D. Dubuc, B. Poussard, C. Bordas, K. Grenier, L. Bary, O. Vendier, J. L. Muraro:
Failure predictive model of capacitive RF-MEMS.
1770-1775
Electronic Edition (link) BibTeX
- K. Yacine, F. Flourens, D. Bourrier, L. Salvagnac, P. Calmont, X. Lafontan, Q.-H. Duong, L. Buchaillot, D. Peyrou, P. Pons:
Biaxial initial stress characterization of bilayer gold RF-switches.
1776-1781
Electronic Edition (link) BibTeX
- M. Exarchos, V. Theonas, P. Pons, G. J. Papaioannou, S. Mellé, D. Dubuc, F. Cocetti, R. Plana:
Investigation of charging mechanisms in metal-insulator-metal structures.
1782-1785
Electronic Edition (link) BibTeX
- D. Briand, Felix Beaudoin, J. Courbat, N. F. de Rooij, Romain Desplats, Philippe Perdu:
Failure analysis of micro-heating elements suspended on thin membranes.
1786-1789
Electronic Edition (link) BibTeX
- Q.-H. Duong, L. Buchaillot, D. Collard, P. Schmitt, X. Lafontan, P. Pons, F. Flourens, F. Pressecq:
Thermal and electrostatic reliability characterization in RF MEMS switches.
1790-1793
Electronic Edition (link) BibTeX
- Chuanzhao Yu, J. S. Yuan, Anwar Sadat:
Dynamic stress-induced high-frequency noise degradations in nMOSFETs.
1794-1799
Electronic Edition (link) BibTeX
- P. Benoit, J. Raoult, C. Delseny, F. Pascal, L. Snadny, J. C. Vildeuil, M. Marin, B. Martinet, D. Cottin, O. Noblanc:
Dc and low frequency noise analysis of hot-carrier induced degradation of low complexity 0.13 mum CMOS bipolar transistors.
1800-1806
Electronic Edition (link) BibTeX
Volume 45,
Number 12,
December 2005
SPECIAL SECTION:
THE TDDB POWER-LAW MODEL - PHYSICS AND EXPERIMENTAL EVIDENCES
Invited Paper
Research Papers
- Thomas Pompl, Michael Röhner:
Voltage acceleration of time-dependent breakdown of ultra-thin gate dielectrics.
1835-1841
Electronic Edition (link) BibTeX
- G. Ribes, S. Bruyère, M. Denais, F. Monsieur, V. Huard, D. Roy, G. Ghibaudo:
Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides.
1842-1854
Electronic Edition (link) BibTeX
- A. Haggag, N. Liu, D. Menke, M. Moosa:
Physical model for the power-law voltage and current acceleration of TDDB.
1855-1860
Electronic Edition (link) BibTeX
- Rainer Duschl, Rolf-Peter Vollertsen:
Is the power-law model applicable beyond the direct tunneling regime?
1861-1867
Electronic Edition (link) BibTeX
SPECIAL SECTION:
RELIABILITY OF COMPOUND SEMICONDUCTORS (ROCS 2004) WORKSHOP
Research Papers
- Yuan Chen, Qing Wang, Sammy Kayali:
A statistical approach to characterizing the reliability of systems utilizing HBT devices.
1869-1874
Electronic Edition (link) BibTeX
- William J. Roesch, Dorothy June M. Hamada:
Metal defect yield and reliability relationships.
1875-1881
Electronic Edition (link) BibTeX
- Charles S. Whitman, Michael Meeder:
Determining constant voltage lifetimes for silicon nitride capacitors in a GaAs IC process by a step stress method.
1882-1893
Electronic Edition (link) BibTeX
- Takayuki Hisaka, Yasuki Aihara, Yoichi Nogami, Hajime Sasaki, Yasushi Uehara, Naohito Yoshida, Kazuo Hayashi:
Degradation mechanisms of GaAs PHEMTs in high humidity conditions.
1894-1900
Electronic Edition (link) BibTeX
Special Section:
IMAPS Poland 2004 Conference
Research Papers
- G. G. Umarji, S. A. Ketkar, G. J. Phatak, V. D. Giramkar, U. P. Mulik, D. P. Amalnerkar:
An aqueous developable photoimageable silver conductor composition for high density electronic packaging.
1903-1909
Electronic Edition (link) BibTeX
- Zbigniew Suszynski, Radoslaw Duer:
Photoacoustic inspection of thermal properties of layered structure with pulse excitations.
1910-1915
Electronic Edition (link) BibTeX
- Cho-Liang Chung, Liang-Tien Lu, Yao-Jung Lee:
Influence of halogen-free compound and lead-free solder paste on on-board reliability of green CSP (chip scale package).
1916-1923
Electronic Edition (link) BibTeX
- Darko Belavic, Marko Hrovat, Jaroslaw Kita, Janez Holc, Jena Cilensek, Leszek J. Golonka, Andrzej Dziedzic:
Evaluation of compatibility of thick-film PTC thermistors and LTCC structures.
1924-1929
Electronic Edition (link) BibTeX
- W. Zaraska, P. Thor, M. Lipinski, M. Ciez, W. Grzesiak, J. Poczatek, K. Zaraska:
Design and fabrication of neurostimulator implants - selected problems.
1930-1934
Electronic Edition (link) BibTeX
- Ryszard Kisiel, Janusz Borecki, Grazyna Koziol, Jan Felba:
Conductive adhesives for through holes and blind vias metallization.
1935-1940
Electronic Edition (link) BibTeX
- Marek Wronski, Slawomir Kaminski, Edward Mis, Andrzej Dziedzic:
New trim configurations for laser trimmed thick-film resistors - theoretical analysis, numerical simulation and experimental verification.
1941-1948
Electronic Edition (link) BibTeX
Book Reviews
- Mile K. Stojcev:
N.G. Jacobson, The In-System Configuration Handbook: A Designer's Guide to ISC, Kluwer Academic Publishers, Boston, 2004, ISBN 1-4020-7655-X. Hardcover, pp 201, plus XVII.
1949-1950
Electronic Edition (link) BibTeX
- Mile K. Stojcev:
Gregory A. Matson, Tony R. Taylor, Julie N. Villar, Elements of STIL: Principles and Applications of IEEE Std. 1450, Kluwer Academic Publishers, Boston, 2003, Hardcover, pp 291, plus XIX, ISBN 1-4020-7637-1.
1951-1952
Electronic Edition (link) BibTeX
Copyright © Sun May 17 00:14:14 2009
by Michael Ley (ley@uni-trier.de)
