| 2008 |
|---|
| 15 | EE | Asha Viswanath,
D. Roy:
A multistep transversal linearization (MTL) method in non-linear dynamics through a Magnus characterization.
Applied Mathematics and Computation 198(2): 799-823 (2008) |
| 14 | EE | Sanghamitra Bandyopadhyay,
Ujjwal Maulik,
D. Roy:
Gene Identification: Classical and Computational Intelligence Approaches.
IEEE Transactions on Systems, Man, and Cybernetics, Part C 38(1): 55-68 (2008) |
| 2007 |
|---|
| 13 | EE | M. Levit,
D. Roy:
Interpretation of Spatial Language in a Map Navigation Task.
IEEE Transactions on Systems, Man, and Cybernetics, Part B 37(3): 667-679 (2007) |
| 2006 |
|---|
| 12 | EE | C. R. Parthasarathy,
M. Denais,
V. Huard,
G. Ribes,
D. Roy,
C. Guérin,
F. Perrier,
E. Vincent,
A. Bravaix:
Designing in reliability in advanced CMOS technologies.
Microelectronics Reliability 46(9-11): 1464-1471 (2006) |
| 2005 |
|---|
| 11 | EE | G. Ribes,
S. Bruyère,
M. Denais,
F. Monsieur,
V. Huard,
D. Roy,
G. Ghibaudo:
Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides.
Microelectronics Reliability 45(12): 1842-1854 (2005) |
| 10 | EE | G. Ribes,
S. Bruyère,
M. Denais,
D. Roy,
G. Ghibaudo:
Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown.
Microelectronics Reliability 45(5-6): 841-844 (2005) |
| 2004 |
|---|
| 9 | EE | D. Roy:
Discrete Rayleigh distribution.
IEEE Transactions on Reliability 53(2): 255-260 (2004) |
| 2003 |
|---|
| 8 | EE | F. Monsieur,
E. Vincent,
V. Huard,
S. Bruyère,
D. Roy,
Thomas Skotnicki,
G. Pananakakis,
G. Ghibaudo:
On the role of holes in oxide breakdown mechanism in inverted nMOSFETs.
Microelectronics Reliability 43(8): 1199-1202 (2003) |
| 7 | EE | G. Ribes,
S. Bruyère,
F. Monsieur,
D. Roy,
V. Huard:
New insights into the change of voltage acceleration and temperature activation of oxide breakdown.
Microelectronics Reliability 43(8): 1211-1214 (2003) |
| 2002 |
|---|
| 6 | EE | T. Devoivre,
M. Lunenborg,
C. Julien,
J.-P. Carrere,
P. Ferreira,
W. J. Toren,
A. VandeGoor,
P. Gayet,
T. Berger,
O. Hinsinger,
P. Vannier,
Y. Trouiller,
Y. Rody,
P.-J. Goirand,
R. Palla,
I. Thomas,
F. Guyader,
D. Roy,
B. Borot,
N. Planes,
S. Naudet,
F. Pico,
D. Duca,
F. Lalanne,
D. Heslinga,
M. Haond:
Validated 90nm CMOS Technology Platform with Low-k Copper Interconnects for Advanced System-on-Chip (SoC).
MTDT 2002: 157-162 |
| 5 | EE | D. Roy,
S. Bruyère,
E. Vincent,
F. Monsieur:
Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement.
Microelectronics Reliability 42(9-11): 1497-1500 (2002) |
| 4 | EE | F. Monsieur,
E. Vincent,
D. Roy,
S. Bruyère,
G. Pananakakis,
G. Ghibaudo:
Gate oxide Reliability assessment optimization.
Microelectronics Reliability 42(9-11): 1505-1508 (2002) |
| 2001 |
|---|
| 3 | EE | S. Bruyère,
D. Roy,
E. Robilliart,
E. Vincent,
G. Ghibaudo:
Body effect induced wear-out acceleration in ultra-thin oxides.
Microelectronics Reliability 41(7): 1031-1034 (2001) |
| 2 | | F. Monsieur,
E. Vincent,
D. Roy,
S. Bruyère,
G. Pananakakis,
G. Ghibaudo:
Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions.
Microelectronics Reliability 41(9-10): 1295-1300 (2001) |
| 1 | | S. Bruyère,
F. Monsieur,
D. Roy,
E. Vincent,
G. Ghibaudo:
Failures in ultrathin oxides: Stored energy or carrier energy driven?
Microelectronics Reliability 41(9-10): 1367-1372 (2001) |
