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Longxing Shi

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2006
3EEZhilin Sun, Weifeng Sun, Longxing Shi: A review of safe operation area. Microelectronics Journal 37(7): 661-667 (2006)
2EEZhilin Sun, Weifeng Sun, Yangbo Yi, Longxing Shi: Study of the power capability of LDMOS and the improved methods. Microelectronics Reliability 46(5-6): 1001-1005 (2006)
2005
1EEWeifeng Sun, Longxing Shi: Improving the yield and reliability of the bulk-silicon HV-CMOS by adding a P-well. Microelectronics Reliability 45(1): 185-190 (2005)

Coauthor Index

1Weifeng Sun [1] [2] [3]
2Zhilin Sun [2] [3]
3Yangbo Yi [2]

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