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| 2005 | ||
|---|---|---|
| 1 | EE | Giacomo Barletta, Giuseppe Currò: Junction leakage current degradation under high temperature reverse-bias stress induced by band-defect-band tunnelling in power VDMOS. Microelectronics Reliability 45(5-6): 994-999 (2005) |
| 1 | Giacomo Barletta | [1] |