| |
| 2005 | ||
|---|---|---|
| 2 | EE | V. Em. Vamvakas, D. Davazoglou: Influence of the annealing temperature on the IR properties of SiO2 films grown from SiH4+O2. Microelectronics Reliability 45(5-6): 986-989 (2005) |
| 1 | EE | M. Vasilopoulou, A. M. Douvas, D. Kouvatsos, P. Argitis, D. Davazoglou: Characterization of various insulators for possible use as low-k dielectrics deposited at temperatures below 200degreeC. Microelectronics Reliability 45(5-6): 990-993 (2005) |
| 1 | P. Argitis | [1] |
| 2 | A. M. Douvas | [1] |
| 3 | D. Kouvatsos | [1] |
| 4 | V. Em. Vamvakas | [2] |
| 5 | M. Vasilopoulou | [1] |