| 2007 |
|---|
| 6 | EE | M. A. Belaïd,
K. Ketata,
K. Mourgues,
M. Gares,
M. Masmoudi,
J. Marcon:
Reliability study of power RF LDMOS device under thermal stress.
Microelectronics Journal 38(2): 164-170 (2007) |
| 5 | EE | M. Alwan,
B. Beydoun,
K. Ketata,
M. Zoaeter:
Bias temperature instability from gate charge characteristics investigations in N-Channel Power MOSFET.
Microelectronics Journal 38(6-7): 727-734 (2007) |
| 4 | EE | M. A. Belaïd,
K. Ketata,
M. Gares,
K. Mourgues,
M. Masmoudi,
J. Marcon:
Comparative analysis of RF LDMOS capacitance reliability under accelerated ageing tests.
Microelectronics Reliability 47(1): 59-64 (2007) |
| 2006 |
|---|
| 3 | EE | H. Maanane,
M. Masmoudi,
J. Marcon,
M. A. Belaïd,
K. Mourgues,
C. Tolant,
K. Ketata,
Ph. Eudeline:
Study of RF N- LDMOS critical electrical parameter drifts after a thermal and electrical ageing in pulsed RF.
Microelectronics Reliability 46(5-6): 994-1000 (2006) |
| 2 | EE | M. A. Belaïd,
K. Ketata,
M. Masmoudi,
M. Gares,
H. Maanane,
J. Marcon:
Electrical parameters degradation of power RF LDMOS device after accelerated ageing tests.
Microelectronics Reliability 46(9-11): 1800-1805 (2006) |
| 2005 |
|---|
| 1 | EE | M. A. Belaïd,
K. Ketata,
K. Mourgues,
H. Maanane,
M. Masmoudi,
J. Marcon:
Comparative analysis of accelerated ageing effects on power RF LDMOS reliability.
Microelectronics Reliability 45(9-11): 1732-1737 (2005) |
