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K. Esmark

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2005
9EEWolfgang Stadler, K. Esmark, K. Reynders, M. Zubeidat, M. Graf, Wolfgang Wilkening, J. Willemen, N. Qu, S. Mettler, M. Etherton: Test circuits for fast and reliable assessment of CDM robustness of I/O stages. Microelectronics Reliability 45(2): 269-277 (2005)
8EES. Bargstädt-Franke, Wolfgang Stadler, K. Esmark, M. Streibl, K. Domanski, Horst A. Gieser, Heinrich Wolf, W. Bala: Transient latch-up: experimental analysis and device simulation. Microelectronics Reliability 45(2): 297-304 (2005)
7EEM. Streibl, F. Zängl, K. Esmark, Robert Schwencker, Wolfgang Stadler, Harald Gossner, S. Drüen, Doris Schmitt-Landsiedel: High abstraction level permutational ESD concept analysis. Microelectronics Reliability 45(2): 313-321 (2005)
2003
6EEM. Streibl, K. Esmark, A. Sieck, Wolfgang Stadler, M. Wendel, J. Szatkowski, Harald Gossner: Harnessing the base-pushout effect for ESD protection in bipolar and BiCMOS technologies. Microelectronics Reliability 43(7): 1001-1010 (2003)
2002
5EEWolfgang Stadler, K. Esmark, Harald Gossner, M. Streibl, M. Wendel, Wolfgang Fichtner, Dionyz Pogany, Martin Litzenberger, E. Gornik: Device Simulation and Backside Laser Interferometry--Powerful Tools for ESD Protection Development. Microelectronics Reliability 42(9-11): 1267-1274 (2002)
4EEF. Zängl, Harald Gossner, K. Esmark, R. Owen, G. Zimmermann: Case study of a technology transfer causing ESD problems. Microelectronics Reliability 42(9-11): 1275-1280 (2002)
2001
3EEK. Esmark, Wolfgang Stadler, M. Wendel, Harald Gossner, X. Guggenmos, Wolfgang Fichtner: Advanced 2D/3D ESD device simulation - a powerful tool already used in a pre-Si phase. Microelectronics Reliability 41(11): 1761-1770 (2001)
2EEHarald Gossner, T. Müller-Lynch, K. Esmark, M. Stecher: Wide range control of the sustaining voltage of electrostatic discharge protection elements realized in a smart power technology. Microelectronics Reliability 41(3): 385-393 (2001)
1 Martin Litzenberger, R. Pichler, Scrgey Bychikhin, Dionyz Pogany, E. Gornik, K. Esmark, Harald Gossner: Effect of pulse risetime on trigger homogeneity in single finger grounded gate nMOSFET electrostatic discharge protection devices. Microelectronics Reliability 41(9-10): 1385-1390 (2001)

Coauthor Index

1W. Bala [8]
2S. Bargstädt-Franke [8]
3Scrgey Bychikhin [1]
4K. Domanski [8]
5S. Drüen [7]
6M. Etherton [9]
7Wolfgang Fichtner [3] [5]
8Horst A. Gieser [8]
9E. Gornik [1] [5]
10Harald Gossner [1] [2] [3] [4] [5] [6] [7]
11M. Graf [9]
12X. Guggenmos [3]
13Martin Litzenberger [1] [5]
14S. Mettler [9]
15T. Müller-Lynch [2]
16R. Owen [4]
17R. Pichler [1]
18Dionyz Pogany [1] [5]
19N. Qu [9]
20K. Reynders [9]
21Doris Schmitt-Landsiedel [7]
22Robert Schwencker [7]
23A. Sieck [6]
24Wolfgang Stadler [3] [5] [6] [7] [8] [9]
25M. Stecher [2]
26M. Streibl [5] [6] [7] [8]
27J. Szatkowski [6]
28M. Wendel [3] [5] [6]
29Wolfgang Wilkening [9]
30J. Willemen [9]
31Heinrich Wolf [8]
32F. Zängl [4] [7]
33G. Zimmermann [4]
34M. Zubeidat [9]

Copyright © Sun May 17 03:24:02 2009 by Michael Ley (ley@uni-trier.de)