| 2006 |
|---|
| 8 | EE | A. Sozza,
A. Curutchet,
C. Dua,
N. Malbert,
N. Labat,
A. Touboul:
AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements.
Microelectronics Reliability 46(9-11): 1725-1730 (2006) |
| 2005 |
|---|
| 7 | EE | N. Labat:
Editorial.
Microelectronics Reliability 45(9-11): 1275-1276 (2005) |
| 6 | EE | N. Ismail,
N. Malbert,
N. Labat,
A. Touboul,
J. L. Muraro,
F. Brasseau,
D. Langrez:
Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions.
Microelectronics Reliability 45(9-11): 1611-1616 (2005) |
| 2003 |
|---|
| 5 | EE | A. Curutchet,
N. Malbert,
N. Labat,
A. Touboul,
C. Gaquière,
A. Minko,
M. Uren:
Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates.
Microelectronics Reliability 43(9-11): 1713-1718 (2003) |
| 4 | EE | J. C. Martin,
C. Maneux,
N. Labat,
A. Touboul,
Muriel Riet,
S. Blayac,
M. Kahn,
Jean Godin:
1/f noise analysis of InP/InGaAs DHBTs submitted to bias and thermal stresses.
Microelectronics Reliability 43(9-11): 1725-1730 (2003) |
| 3 | EE | M. Belhaj,
C. Maneux,
N. Labat,
A. Touboul,
P. Bove:
High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects.
Microelectronics Reliability 43(9-11): 1731-1736 (2003) |
| 2002 |
|---|
| 2 | EE | N. Labat,
N. Malbert,
B. Lambert,
A. Touboul,
F. Garat,
B. Proust:
Degradation mechanisms induced by thermal and bias stresses in InP HEMTs.
Microelectronics Reliability 42(9-11): 1575-1580 (2002) |
| 2001 |
|---|
| 1 | | B. Lambert,
N. Malbert,
N. Labat,
F. Verdier,
A. Touboul,
P. Huguet,
R. Bonnet,
G. Pataut:
Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses.
Microelectronics Reliability 41(9-10): 1573-1578 (2001) |
