2005 |
6 | EE | I. Cortés,
J. Roig,
D. Flores,
J. Urresti,
S. Hidalgo,
J. Rebollo:
Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile.
Microelectronics Reliability 45(3-4): 493-498 (2005) |
5 | EE | J. Urresti,
S. Hidalgo,
D. Flores,
J. Roig,
I. Cortés,
J. Rebollo:
Lateral punch-through TVS devices for on-chip protection in low-voltage applications.
Microelectronics Reliability 45(7-8): 1181-1186 (2005) |
2004 |
4 | EE | M. Vellvehí,
D. Flores,
X. Jordà,
S. Hidalgo,
J. Rebollo,
L. Coulbeck,
P. Waind:
Design considerations for 6.5 kV IGBT devices.
Microelectronics Journal 35(3): 269-275 (2004) |
3 | EE | J. Roig,
D. Flores,
S. Hidalgo,
J. Rebollo,
J. Millán:
Thin-film silicon-on-sapphire LDMOS structures for RF power amplifier applications.
Microelectronics Journal 35(3): 291-297 (2004) |
2003 |
2 | EE | J. Urresti,
S. Hidalgo,
D. Flores,
J. Roig,
J. Rebollo,
I. Mazarredo:
Optimisation of very low voltage TVS protection devices.
Microelectronics Journal 34(9): 809-813 (2003) |
1 | EE | S. Hidalgo,
D. Flores,
I. Obieta,
I. Mazarredo:
Passivation and packaging of positive bevelled edge termination and related electrical stability.
Microelectronics Reliability 43(3): 413-420 (2003) |