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G. Currò

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2006
3EEG. Busatto, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi, G. Currò: Experimental study of power MOSFET's gate damage in radiation environment. Microelectronics Reliability 46(9-11): 1854-1857 (2006)
2005
2EEG. Busatto, A. Porzio, F. Velardi, F. Iannuzzo, A. Sanseverino, G. Currò: Experimental and Numerical investigation about SEB/SEGR of Power MOSFET. Microelectronics Reliability 45(9-11): 1711-1716 (2005)
2003
1EEF. Velardi, F. Iannuzzo, G. Busatto, J. Wyss, A. Sanseverino, A. Candelori, G. Currò, A. Cascio, F. Frisina: Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment. Microelectronics Reliability 43(9-11): 1847-1851 (2003)

Coauthor Index

1G. Busatto [1] [2] [3]
2A. Candelori [1]
3A. Cascio [1]
4F. Frisina [1]
5F. Iannuzzo [1] [2] [3]
6A. Porzio [2] [3]
7A. Sanseverino [1] [2] [3]
8F. Velardi [1] [2] [3]
9J. Wyss [1]

Copyright © Sun May 17 03:24:02 2009 by Michael Ley (ley@uni-trier.de)