2006 | ||
---|---|---|
2 | EE | K. Hayama, K. Takakura, K. Shigaki, H. Ohyama, J. M. Rafí, A. Mercha, E. Simoen, C. Claeys: Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation. Microelectronics Reliability 46(9-11): 1731-1735 (2006) |
2005 | ||
1 | EE | K. Hayama, K. Takakura, H. Ohyama, S. Kuboyama, S. Matsuda, J. M. Rafí, A. Mercha, E. Simoen, C. Claeys: Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs. Microelectronics Reliability 45(9-11): 1376-1381 (2005) |
1 | C. Claeys | [1] [2] |
2 | K. Hayama | [1] [2] |
3 | S. Kuboyama | [1] |
4 | S. Matsuda | [1] |
5 | A. Mercha | [1] [2] |
6 | H. Ohyama | [1] [2] |
7 | J. M. Rafí | [1] [2] |
8 | K. Shigaki | [2] |
9 | E. Simoen | [1] [2] |