| 2005 |
|---|
| 3 | EE | V. Capodieci,
F. Wiest,
T. Sulima,
J. Schulze,
I. Eisele:
Examination and evaluation of La2O3 as gate dielectric for sub-100nm CMOS and DRAM technology.
Microelectronics Reliability 45(5-6): 937-940 (2005) |
| 2001 |
|---|
| 2 | EE | G. Shrivastav,
S. Mahapatra,
V. Ramgopal Rao,
J. Vasi,
K. G. Anil,
C. Fink,
Walter Hansch,
I. Eisele:
erformance Optimization Of 60 Nm Channel Length Vertical Mosfets Using Channel Engineering.
VLSI Design 2001: 475-478 |
| 1 | EE | A. Stadler,
I. Genchev,
A. Bergmaier,
G. Dollinger,
V. Petrova-Koch,
Walter Hansch,
H. Baumgärtner,
I. Eisele:
Nitrogen implantations for rapid thermal oxinitride layers.
Microelectronics Reliability 41(7): 977-980 (2001) |
