| 2005 |
|---|
| 3 | EE | F. Sibileau,
C. Ali,
C. Giret,
D. Faure:
SRAM cell defect isolation methodology by sub micron probing technique.
Microelectronics Reliability 45(9-11): 1562-1567 (2005) |
| 2003 |
|---|
| 2 | EE | D. Faure,
D. Bru,
C. Ali,
C. Giret,
K. Christensen:
Gate oxide breakdown characterization on 0.13mum CMOS technology.
Microelectronics Reliability 43(9-11): 1519-1523 (2003) |
| 2002 |
|---|
| 1 | EE | C. Giret,
D. Bru,
D. Faure,
C. Ali,
M. Razani,
D. Gobled:
Electrical characteristics measurement of transistors by 4 tips-0.2 micron probing technique in Semiconductor Failure Analysis.
Microelectronics Reliability 42(9-11): 1723-1727 (2002) |
