V. Capodieci

2005
1	EE	V. Capodieci, F. Wiest, T. Sulima, J. Schulze, I. Eisele: Examination and evaluation of La2O3 as gate dielectric for sub-100nm CMOS and DRAM technology. Microelectronics Reliability 45(5-6): 937-940 (2005)

Coauthor Index

1	I. Eisele	[1]
2	J. Schulze	[1]
3	T. Sulima	[1]
4	F. Wiest	[1]