| |
| 2005 | ||
|---|---|---|
| 1 | EE | V. Capodieci, F. Wiest, T. Sulima, J. Schulze, I. Eisele: Examination and evaluation of La2O3 as gate dielectric for sub-100nm CMOS and DRAM technology. Microelectronics Reliability 45(5-6): 937-940 (2005) |
| 1 | V. Capodieci | [1] |
| 2 | I. Eisele | [1] |
| 3 | J. Schulze | [1] |
| 4 | T. Sulima | [1] |