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F. Wiest

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2005
1EEV. Capodieci, F. Wiest, T. Sulima, J. Schulze, I. Eisele: Examination and evaluation of La2O3 as gate dielectric for sub-100nm CMOS and DRAM technology. Microelectronics Reliability 45(5-6): 937-940 (2005)

Coauthor Index

1V. Capodieci [1]
2I. Eisele [1]
3J. Schulze [1]
4T. Sulima [1]

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