2008 |
26 | EE | Florian Bauer,
Georg Georgakos,
Doris Schmitt-Landsiedel:
A Design Space Comparison of 6T and 8T SRAM Core-Cells.
PATMOS 2008: 116-125 |
25 | EE | Yan Li,
Helmut Schneider,
Florian Schnabel,
Roland Thewes,
Doris Schmitt-Landsiedel:
Latched CMOS DRAM Sense Amplifier Yield Analysis and Optimization.
PATMOS 2008: 126-135 |
2007 |
24 | EE | Michael Fulde,
Doris Schmitt-Landsiedel,
Gerhard Knoblinger:
Transient Variations in Emerging SOI Technologies: Modeling and Impact on Analog/Mixed-Signal Circuits.
ISCAS 2007: 1249-1252 |
23 | EE | Eric Liau,
Doris Schmitt-Landsiedel:
Computational Intelligence Characterization Method of Semiconductor Device
CoRR abs/0710.4734: (2007) |
2005 |
22 | EE | Stephan Henzler,
Thomas Nirschl,
Matthias Eireiner,
Ettore Amirante,
Doris Schmitt-Landsiedel:
Making adiabatic circuits attractive for todays VLSI industry by multi-mode operation-adiabatic mode circuits.
Conf. Computing Frontiers 2005: 414-420 |
21 | EE | Jürgen Fischer,
Philip Teichmann,
Doris Schmitt-Landsiedel:
Scaling trends in adiabatic logic.
Conf. Computing Frontiers 2005: 427-434 |
20 | EE | Eric Liau,
Doris Schmitt-Landsiedel:
Computational Intelligence Characterization Method of Semiconductor Device.
DATE 2005: 456-461 |
19 | | Jürgen Fischer,
Philip Teichmann,
Ettore Amirante,
Doris Schmitt-Landsiedel:
Energieoptimierung durch Adiabatische Schaltungstechnik.
GI Jahrestagung (1) 2005: 446 |
18 | EE | Björn Eversmann,
Martin Jenkner,
Franz Hofmann,
Christian Paulus,
Birgit Holzapfl,
Roland Thewes,
Doris Schmitt-Landsiedel,
A. Lambacher,
A. Kaul,
R. Zeitler,
M. Merz,
A. Junze,
P. Fromherz:
CMOS sensor array for electrical imaging of neuronal activity.
ISCAS (4) 2005: 3479-3482 |
17 | EE | Philip Teichmann,
Jürgen Fischer,
Stephan Henzler,
Ettore Amirante,
Doris Schmitt-Landsiedel:
Power-Clock Gating in Adiabatic Logic Circuits.
PATMOS 2005: 638-646 |
16 | EE | M. Streibl,
F. Zängl,
K. Esmark,
Robert Schwencker,
Wolfgang Stadler,
Harald Gossner,
S. Drüen,
Doris Schmitt-Landsiedel:
High abstraction level permutational ESD concept analysis.
Microelectronics Reliability 45(2): 313-321 (2005) |
2004 |
15 | | Thomas Nirschl,
Peng-Fei Wang,
Walter Hansch,
Doris Schmitt-Landsiedel:
The tunnelling field effect transistors (TFET): the temperature dependence, the simulation model, and its application.
ISCAS (3) 2004: 713-716 |
14 | EE | Stephan Henzler,
Georg Georgakos,
Jörg Berthold,
Doris Schmitt-Landsiedel:
Single Supply Voltage High-Speed Semi-dynamic Level-Converting Flip-Flop with Low Power and Area Consumption.
PATMOS 2004: 392-401 |
13 | EE | Jürgen Fischer,
Ettore Amirante,
Agnese Bargagli-Stoffi,
Philip Teichmann,
Dominik Gruber,
Doris Schmitt-Landsiedel:
Power Supply Net for Adiabatic Circuits.
PATMOS 2004: 413-422 |
12 | EE | Stephan Henzler,
Georg Georgakos,
Jörg Berthold,
Doris Schmitt-Landsiedel:
Two Level Compact Simulation Methodology for Timing Analysis of Power-Switched Circuits.
PATMOS 2004: 789-798 |
2003 |
11 | EE | Jörg Sauerbrey,
M. Wittig,
Doris Schmitt-Landsiedel,
Roland Thewes:
0.65V sigma-delta modulators.
ISCAS (1) 2003: 1021-1024 |
10 | EE | Alexander Frey,
Martin Jenkner,
Meinrad Schienle,
Christian Paulus,
Birgit Holzapfl,
Petra Schindler-Bauer,
Franz Hofmann,
D. Kuhlmeier,
J. Krause,
J. Albers,
W. Gumbrecht,
Doris Schmitt-Landsiedel,
Roland Thewes:
Design of an integrated potentiostat circuit for CMOS bio sensor chips.
ISCAS (5) 2003: 9-12 |
9 | EE | Jürgen Fischer,
Ettore Amirante,
Francesco Randazzo,
Giuseppe Iannaccone,
Doris Schmitt-Landsiedel:
Reduction of the Energy Consumption in Adiabatic Gates by Optimal Transistor Sizing.
PATMOS 2003: 309-318 |
8 | | Stephan Henzler,
Markus Koban,
Doris Schmitt-Landsiedel,
Jörg Berthold,
Georg Georgakos:
Design Aspects and Technological Scaling Limits of ZigZag Circuit Block Switch-Off Schemes.
VLSI-SOC 2003: 246-251 |
7 | EE | Alberto Castellazzi,
V. Kartal,
R. Kraus,
N. Seliger,
Martin Honsberg-Riedl,
Doris Schmitt-Landsiedel:
Hot-Spot Meaurements and Analysis of Electro-Thermal Effects in Low-Voltage Power-MOSFET's.
Microelectronics Reliability 43(9-11): 1877-1882 (2003) |
2002 |
6 | EE | Alberto Castellazzi,
R. Kraus,
N. Seliger,
Doris Schmitt-Landsiedel:
Reliability analysis of power MOSFET's with the help of compact models and circuit simulation.
Microelectronics Reliability 42(9-11): 1605-1610 (2002) |
2001 |
5 | EE | T. Tille,
Jörg Sauerbrey,
Doris Schmitt-Landsiedel:
A low-voltage MOSFET-only Sigma-Delta modulator for speech band applications using depletion-mode MOS-capacitors in combined series and parallel compensation.
ISCAS (1) 2001: 376-379 |
1997 |
4 | EE | M. Eisele,
Jörg Berthold,
Doris Schmitt-Landsiedel,
R. Mahnkopf:
The impact of intra-die device parameter variations on path delays and on the design for yield of low voltage digital circuits.
IEEE Trans. VLSI Syst. 5(4): 360-368 (1997) |
1996 |
3 | EE | M. Eisele,
Jörg Berthold,
Doris Schmitt-Landsiedel,
R. Mahnkopf:
The impact of intra-die device parameter variations on path delays and on the design for yield of low voltage digital circuits.
ISLPED 1996: 237-242 |
1995 |
2 | EE | S. R. Kadivar,
Doris Schmitt-Landsiedel,
H. Klar:
A new algorithm for the design of stable higher order single loop sigma delta analog-to-digital converters.
ICCAD 1995: 554-561 |
1990 |
1 | EE | Bernhard Hoppe,
Gerd Neuendorf,
Doris Schmitt-Landsiedel,
J. Will Specks:
Optimization of high-speed CMOS logic circuits with analytical models for signal delay, chip area, and dynamic power dissipation.
IEEE Trans. on CAD of Integrated Circuits and Systems 9(3): 236-247 (1990) |