Ton J. Mouthaan

2008
13	EE	Zsófia Ruttkay, Ton J. Mouthaan: CreaTe: A New Programme to Attract Engineers as Design Artists. DELTA 2008: 592-596
2006
12	EE	Ton J. Mouthaan, Anke Kohl: Internationalisation of Masters education; globalisation at work. DELTA 2006: 113-115
2005
11	EE	M. S. B. Sowariraj, Theo Smedes, Peter C. de Jong, Cora Salm, Ton J. Mouthaan, Fred G. Kuper: A 3-D Circuit Model to evaluate CDM performance of ICs. Microelectronics Reliability 45(9-11): 1425-1429 (2005)
2004
10	EE	Ton J. Mouthaan: A Case Study of a Microsystems MSc Curriculum. DELTA 2004: 146-148
2003
9	EE	Ton J. Mouthaan, Wouter Olthuis, Henk Vos: Competence-Based EE-Learning: (How) Can We Implement It? MSE 2003: 33-34
8	EE	M. S. B. Sowariraj, Theo Smedes, Cora Salm, Ton J. Mouthaan, Fred G. Kuper: Role of package parasitics and substrate resistance on the Charged Device Model (CDM) failure levels -An explanation and die protection strategy. Microelectronics Reliability 43(9-11): 1569-1575 (2003)
2002
7	EE	Ton J. Mouthaan, R. W. Brink, Henk Vos: Competencies of BSc and MSc Programmes in Electrical Engineering and Student Portfolios. DELTA 2002: 203-208
6	EE	N. Tosic Golo, Fred G. Kuper, Ton J. Mouthaan: Zapping thin film transistors. Microelectronics Reliability 42(4-5): 747-765 (2002)
5	EE	M. S. B. Sowariraj, Theo Smedes, Cora Salm, Ton J. Mouthaan, Fred G. Kuper: The influence of technology variation on ggNMOSTs and SCRs against CDM BSD stress. Microelectronics Reliability 42(9-11): 1287-1292 (2002)
2001
4	EE	Gianluca Boselli, Stan Meeuwsen, Ton J. Mouthaan, Fred G. Kuper: Investigations on double-diffused MOS transistors under ESD zap conditions. Microelectronics Reliability 41(3): 395-405 (2001)
3		N. Tosic Golo, S. van der Wal, Fred G. Kuper, Ton J. Mouthaan: The time-voltage trade-off for ESD damage threshold in amorphous silicon hydrogenated thin-film transistors. Microelectronics Reliability 41(9-10): 1391-1396 (2001)
1996
2	EE	Benno H. Krabbenborg, A. Bosma, H. C. de Graaff, Ton J. Mouthaan: Layout to circuit extraction for three-dimensional thermal-electrical circuit simulation of device structures. IEEE Trans. on CAD of Integrated Circuits and Systems 15(7): 765-774 (1996)
1994
1	EE	Philip B. M. Wolbert, Gerhard K. M. Wachutka, Benno H. Krabbenborg, Ton J. Mouthaan: Nonisothermal device simulation using the 2D numerical process/device simulator TRENDY and application to SOI-devices. IEEE Trans. on CAD of Integrated Circuits and Systems 13(3): 293-302 (1994)

Coauthor Index

1	Gianluca Boselli	[4]
2	A. Bosma	[2]
3	R. W. Brink	[7]
4	N. Tosic Golo	[3] [6]
5	H. C. de Graaff	[2]
6	Peter C. de Jong	[11]
7	Anke Kohl	[12]
8	Benno H. Krabbenborg	[1] [2]
9	Fred G. Kuper	[3] [4] [5] [6] [8] [11]
10	Stan Meeuwsen	[4]
11	Wouter Olthuis	[9]
12	Zsófia Ruttkay	[13]
13	Cora Salm	[5] [8] [11]
14	Theo Smedes	[5] [8] [11]
15	M. S. B. Sowariraj	[5] [8] [11]
16	Henk Vos	[7] [9]
17	Gerhard K. M. Wachutka	[1]
18	S. van der Wal	[3]
19	Philip B. M. Wolbert	[1]

Colors in the list of coauthors