| 2005 |
|---|
| 6 | EE | D. Goguenheim,
A. Bravaix,
S. Gomri,
J. M. Moragues,
C. Monserie,
N. Legrand,
P. Boivin:
Impact of wafer charging on hot carrier reliability and optimization of latent damage detection methodology in advanced CMOS technologies.
Microelectronics Reliability 45(3-4): 487-492 (2005) |
| 5 | EE | C. Trapes,
D. Goguenheim,
A. Bravaix:
Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxides.
Microelectronics Reliability 45(5-6): 883-886 (2005) |
| 4 | EE | A. Bravaix,
D. Goguenheim,
M. Denais,
V. Huard,
C. R. Parthasarathy,
F. Perrier,
N. Revil,
E. Vincent:
Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs.
Microelectronics Reliability 45(9-11): 1370-1375 (2005) |
| 2004 |
|---|
| 3 | EE | A. Bravaix,
D. Goguenheim,
N. Revil,
E. Vincent:
Hole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5-2 nm thick gate-oxides.
Microelectronics Reliability 44(1): 65-77 (2004) |
| 2003 |
|---|
| 2 | EE | A. Bravaix,
C. Trapes,
D. Goguenheim,
N. Revil,
E. Vincent:
Carrier injection efficiency for the reliability study of 3.5-1.2 nm thick gate-oxide CMOS technologies.
Microelectronics Reliability 43(8): 1241-1246 (2003) |
| 2001 |
|---|
| 1 | | A. Bravaix,
D. Goguenheim,
N. Revil,
E. Vincent:
Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15mum Channel-Length N-MOSFETs.
Microelectronics Reliability 41(9-10): 1313-1318 (2001) |
