| 2006 |
|---|
| 7 | EE | C. Lochot,
J. P. Lainé,
M. Bafleur,
A. Cazarré,
J. Tasselli:
Potentialities of substrate-thinning technique to control minority carrier injection in smart power IC's.
Microelectronics Journal 37(8): 804-811 (2006) |
| 6 | EE | F. Essely,
F. Darracq,
V. Pouget,
M. Remmach,
Felix Beaudoin,
N. Guitard,
M. Bafleur,
Philippe Perdu,
A. Touboul,
D. Lewis:
Application of various optical techniques for ESD defect localization.
Microelectronics Reliability 46(9-11): 1563-1568 (2006) |
| 2005 |
|---|
| 5 | EE | N. Guitard,
F. Essely,
D. Trémouilles,
M. Bafleur,
N. Nolhier,
Philippe Perdu,
A. Touboul,
V. Pouget,
D. Lewis:
Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure.
Microelectronics Reliability 45(9-11): 1415-1420 (2005) |
| 2003 |
|---|
| 4 | EE | D. Trémouilles,
G. Bertrand,
M. Bafleur,
Felix Beaudoin,
Philippe Perdu,
N. Guitard,
L. Lescouzères:
TCAD and SPICE modeling help solve ESD protection issues in analog CMOS technology.
Microelectronics Reliability 43(1): 71-79 (2003) |
| 3 | EE | T. Beauchêne,
D. Lewis,
Felix Beaudoin,
V. Pouget,
Romain Desplats,
P. Fouillat,
Philippe Perdu,
M. Bafleur,
D. Trémouilles:
Thermal laser stimulation and NB-OBIC techniques applied to ESD defect localization.
Microelectronics Reliability 43(3): 439-444 (2003) |
| 2 | EE | M. Zecri,
P. Besse,
P. Givelin,
M. Nayrolles,
M. Bafleur,
N. Nolhier:
Determination of the ESD Failure Cause Through its Signature.
Microelectronics Reliability 43(9-11): 1551-1556 (2003) |
| 2001 |
|---|
| 1 | | Romain Desplats,
Felix Beaudoin,
Philippe Perdu,
P. Poirier,
D. Trémouilles,
M. Bafleur,
D. Lewis:
Backside Localization of Current Leakage Faults Using Thermal Laser Stimulation.
Microelectronics Reliability 41(9-10): 1539-1544 (2001) |
