| 2006 |
|---|
| 5 | EE | A. Benfdila,
F. Balestra:
On the drain current saturation in short channel MOSFETs.
Microelectronics Journal 37(7): 635-641 (2006) |
| 2005 |
|---|
| 4 | EE | M. A. Exarchos,
G. J. Papaioannou,
J. Jomaah,
F. Balestra:
The impact of static and dynamic degradation on SOI "smart-cut" floating body MOSFETs.
Microelectronics Reliability 45(9-11): 1386-1389 (2005) |
| 2002 |
|---|
| 3 | EE | B. Cretu,
F. Balestra,
G. Ghibaudo,
G. Guégan:
Origin of hot carrier degradation in advanced nMOSFET devices.
Microelectronics Reliability 42(9-11): 1405-1408 (2002) |
| 2001 |
|---|
| 2 | EE | S. Haendler,
J. Jomaah,
G. Ghibaudo,
F. Balestra:
Improved analysis of low frequency noise in dynamic threshold MOS/SOI transistors.
Microelectronics Reliability 41(6): 855-860 (2001) |
| 1 | | F. Dieudonné,
F. Daugé,
J. Jomaah,
C. Raynaud,
F. Balestra:
An overview of hot-carrier induced degradation in 0.25 mum Partially and Fully Depleted SOI N-MOSFET's.
Microelectronics Reliability 41(9-10): 1417-1420 (2001) |
