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D. Flores

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2005
7EEI. Cortés, J. Roig, D. Flores, J. Urresti, S. Hidalgo, J. Rebollo: Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile. Microelectronics Reliability 45(3-4): 493-498 (2005)
6EEJ. Urresti, S. Hidalgo, D. Flores, J. Roig, I. Cortés, J. Rebollo: Lateral punch-through TVS devices for on-chip protection in low-voltage applications. Microelectronics Reliability 45(7-8): 1181-1186 (2005)
2004
5EEM. Vellvehí, D. Flores, X. Jordà, S. Hidalgo, J. Rebollo, L. Coulbeck, P. Waind: Design considerations for 6.5 kV IGBT devices. Microelectronics Journal 35(3): 269-275 (2004)
4EEJ. Roig, D. Flores, S. Hidalgo, J. Rebollo, J. Millán: Thin-film silicon-on-sapphire LDMOS structures for RF power amplifier applications. Microelectronics Journal 35(3): 291-297 (2004)
2003
3EEJ. Urresti, S. Hidalgo, D. Flores, J. Roig, J. Rebollo, I. Mazarredo: Optimisation of very low voltage TVS protection devices. Microelectronics Journal 34(9): 809-813 (2003)
2EES. Hidalgo, D. Flores, I. Obieta, I. Mazarredo: Passivation and packaging of positive bevelled edge termination and related electrical stability. Microelectronics Reliability 43(3): 413-420 (2003)
2002
1EEJ. Roig, D. Flores, M. Vellvehí, J. Rebollo, J. Millán: Reduction of self-heating effect on SOIM devices. Microelectronics Reliability 42(1): 61-66 (2002)

Coauthor Index

1I. Cortés [6] [7]
2L. Coulbeck [5]
3S. Hidalgo [2] [3] [4] [5] [6] [7]
4X. Jordà [5]
5I. Mazarredo [2] [3]
6J. Millán [1] [4]
7I. Obieta [2]
8J. Rebollo [1] [3] [4] [5] [6] [7]
9J. Roig [1] [3] [4] [6] [7]
10J. Urresti [3] [6] [7]
11M. Vellvehí [1] [5]
12P. Waind [5]

Copyright © Sun May 17 03:24:02 2009 by Michael Ley (ley@uni-trier.de)