| 2008 |
|---|
| 11 | EE | Georges G. E. Gielen,
P. De Wit,
E. Maricau,
J. Loeckx,
J. Martin-Martinez,
Ben Kaczer,
Guido Groeseneken,
R. Rodríguez,
M. Nafría:
Emerging Yield and Reliability Challenges in Nanometer CMOS Technologies.
DATE 2008: 1322-1327 |
| 2006 |
|---|
| 10 | EE | R. Fernández,
R. Rodríguez,
M. Nafría,
X. Aymerich,
Ben Kaczer,
Guido Groeseneken:
FinFET and MOSFET preliminary comparison of gate oxide reliability.
Microelectronics Reliability 46(9-11): 1608-1611 (2006) |
| 2005 |
|---|
| 9 | EE | X. Blasco,
M. Nafría,
X. Aymerich,
J. Pétry,
Wilfried Vandervorst:
Breakdown spots of ultra-thin (EOT<1.5nm) HfO2/SiO2 stacks observed with enhanced - CAFM.
Microelectronics Reliability 45(5-6): 811-814 (2005) |
| 8 | EE | R. Fernández,
R. Rodríguez,
M. Nafría,
X. Aymerich:
Influence of oxide breakdown position and device aspect ratio on MOSFET's output characteristics.
Microelectronics Reliability 45(5-6): 861-864 (2005) |
| 7 | EE | L. Aguilera,
M. Porti,
M. Nafría,
X. Aymerich:
Pre- and post-BD electrical conduction of stressed HfO2/SiO2 MOS gate stacks observed at the nanoscale.
Microelectronics Reliability 45(9-11): 1390-1393 (2005) |
| 2003 |
|---|
| 6 | EE | M. Porti,
S. Meli,
M. Nafría,
X. Aymerich:
Pre-breakdown noise in electrically stressed thin SiO2 layers of MOS devices observed with C-AFM.
Microelectronics Reliability 43(8): 1203-1209 (2003) |
| 5 | EE | M. Porti,
M. Nafría,
X. Aymerich:
Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM.
Microelectronics Reliability 43(9-11): 1501-1505 (2003) |
| 2002 |
|---|
| 4 | EE | X. Blasco,
M. Nafría,
X. Aymerich:
Conduction and Breakdown Behaviour of Atomic Force Microscopy Grown SiO2 Gate Oxide on MOS Structures.
Microelectronics Reliability 42(9-11): 1513-1516 (2002) |
| 2001 |
|---|
| 3 | EE | R. Rodríguez,
M. Porti,
M. Nafría,
X. Aymerich:
Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO2 films.
Microelectronics Reliability 41(7): 1011-1013 (2001) |
| 2 | EE | M. Porti,
X. Blasco,
M. Nafría,
X. Aymerich,
Alexander Olbrich,
Bernd Ebersberger:
Local current fluctuations before and after breakdown of thin SiO2 films observed with conductive atomic force microscope.
Microelectronics Reliability 41(7): 1041-1044 (2001) |
| 1 | EE | D. Hill,
X. Blasco,
M. Porti,
M. Nafría,
X. Aymerich:
Characterising the surface roughness of AFM grown SiO2 on Si.
Microelectronics Reliability 41(7): 1077-1079 (2001) |
