| 2007 |
|---|
| 3 | EE | C. Leyris,
F. Martinez,
A. Hoffmann,
M. Valenza,
J. C. Vildeuil:
N-MOSFET oxide trap characterization induced by nitridation process using RTS noise analysis.
Microelectronics Reliability 47(1): 41-45 (2007) |
| 2005 |
|---|
| 2 | EE | P. Benoit,
J. Raoult,
C. Delseny,
F. Pascal,
L. Snadny,
J. C. Vildeuil,
M. Marin,
B. Martinet,
D. Cottin,
O. Noblanc:
Dc and low frequency noise analysis of hot-carrier induced degradation of low complexity 0.13 mum CMOS bipolar transistors.
Microelectronics Reliability 45(9-11): 1800-1806 (2005) |
| 2004 |
|---|
| 1 | EE | M. Marin,
Y. Akue Allogo,
M. de Murcia,
P. Llinares,
J. C. Vildeuil:
Low frequency noise characterization in 0.13 mum p-MOSFETs. Impact of scaled-down 0.25, 0.18 and 0.13 mum technologies on 1/f noise.
Microelectronics Reliability 44(7): 1077-1085 (2004) |
