| 2005 |
|---|
| 9 | EE | G. Ribes,
S. Bruyère,
M. Denais,
F. Monsieur,
V. Huard,
D. Roy,
G. Ghibaudo:
Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides.
Microelectronics Reliability 45(12): 1842-1854 (2005) |
| 2003 |
|---|
| 8 | EE | F. Monsieur,
E. Vincent,
V. Huard,
S. Bruyère,
D. Roy,
Thomas Skotnicki,
G. Pananakakis,
G. Ghibaudo:
On the role of holes in oxide breakdown mechanism in inverted nMOSFETs.
Microelectronics Reliability 43(8): 1199-1202 (2003) |
| 7 | EE | G. Ribes,
S. Bruyère,
F. Monsieur,
D. Roy,
V. Huard:
New insights into the change of voltage acceleration and temperature activation of oxide breakdown.
Microelectronics Reliability 43(8): 1211-1214 (2003) |
| 2002 |
|---|
| 6 | EE | D. Roy,
S. Bruyère,
E. Vincent,
F. Monsieur:
Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement.
Microelectronics Reliability 42(9-11): 1497-1500 (2002) |
| 5 | EE | F. Monsieur,
E. Vincent,
D. Roy,
S. Bruyère,
G. Pananakakis,
G. Ghibaudo:
Gate oxide Reliability assessment optimization.
Microelectronics Reliability 42(9-11): 1505-1508 (2002) |
| 2001 |
|---|
| 4 | EE | F. Monsieur,
E. Vincent,
G. Pananakakis,
G. Ghibaudo:
Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides.
Microelectronics Reliability 41(7): 1035-1039 (2001) |
| 3 | | F. Monsieur,
E. Vincent,
D. Roy,
S. Bruyère,
G. Pananakakis,
G. Ghibaudo:
Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions.
Microelectronics Reliability 41(9-10): 1295-1300 (2001) |
| 2 | | M. Fadlallah,
A. Szewczyk,
C. Giannakopoulos,
B. Cretu,
F. Monsieur,
T. Devoivre,
J. Jomaah,
G. Ghibaudo:
Low frequency noise and reliability properties pf 0.12 mum CMOS devices with Ta2O5 as gate dielectrics.
Microelectronics Reliability 41(9-10): 1361-1366 (2001) |
| 1 | | S. Bruyère,
F. Monsieur,
D. Roy,
E. Vincent,
G. Ghibaudo:
Failures in ultrathin oxides: Stored energy or carrier energy driven?
Microelectronics Reliability 41(9-10): 1367-1372 (2001) |
