2008 |
17 | EE | Pierre Leveau,
E. Vincent,
G. Richard,
Laurent Daudet:
Instrument-Specific Harmonic Atoms for Mid-Level Music Representation.
IEEE Transactions on Audio, Speech & Language Processing 16(1): 116-128 (2008) |
2007 |
16 | EE | E. Vincent,
M. D. Plumbley:
Low Bit-Rate Object Coding of Musical Audio Using Bayesian Harmonic Models.
IEEE Transactions on Audio, Speech & Language Processing 15(4): 1273-1282 (2007) |
2006 |
15 | EE | C. R. Parthasarathy,
M. Denais,
V. Huard,
G. Ribes,
D. Roy,
C. Guérin,
F. Perrier,
E. Vincent,
A. Bravaix:
Designing in reliability in advanced CMOS technologies.
Microelectronics Reliability 46(9-11): 1464-1471 (2006) |
2005 |
14 | EE | V. Huard,
M. Denais,
F. Perrier,
N. Revil,
C. R. Parthasarathy,
A. Bravaix,
E. Vincent:
A thorough investigation of MOSFETs NBTI degradation.
Microelectronics Reliability 45(1): 83-98 (2005) |
13 | EE | A. Bravaix,
D. Goguenheim,
M. Denais,
V. Huard,
C. R. Parthasarathy,
F. Perrier,
N. Revil,
E. Vincent:
Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs.
Microelectronics Reliability 45(9-11): 1370-1375 (2005) |
2004 |
12 | EE | A. Bravaix,
D. Goguenheim,
N. Revil,
E. Vincent:
Hole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5-2 nm thick gate-oxides.
Microelectronics Reliability 44(1): 65-77 (2004) |
2003 |
11 | EE | G. Ghibaudo,
E. Vincent:
Guest Editorial.
Microelectronics Reliability 43(8): 1173 (2003) |
10 | EE | F. Monsieur,
E. Vincent,
V. Huard,
S. Bruyère,
D. Roy,
Thomas Skotnicki,
G. Pananakakis,
G. Ghibaudo:
On the role of holes in oxide breakdown mechanism in inverted nMOSFETs.
Microelectronics Reliability 43(8): 1199-1202 (2003) |
9 | EE | C. Besset,
S. Bruyère,
S. Blonkowski,
S. Crémer,
E. Vincent:
MIM capacitance variation under electrical stress.
Microelectronics Reliability 43(8): 1237-1240 (2003) |
8 | EE | A. Bravaix,
C. Trapes,
D. Goguenheim,
N. Revil,
E. Vincent:
Carrier injection efficiency for the reliability study of 3.5-1.2 nm thick gate-oxide CMOS technologies.
Microelectronics Reliability 43(8): 1241-1246 (2003) |
2002 |
7 | EE | D. Roy,
S. Bruyère,
E. Vincent,
F. Monsieur:
Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement.
Microelectronics Reliability 42(9-11): 1497-1500 (2002) |
6 | EE | F. Monsieur,
E. Vincent,
D. Roy,
S. Bruyère,
G. Pananakakis,
G. Ghibaudo:
Gate oxide Reliability assessment optimization.
Microelectronics Reliability 42(9-11): 1505-1508 (2002) |
2001 |
5 | EE | S. Bruyère,
D. Roy,
E. Robilliart,
E. Vincent,
G. Ghibaudo:
Body effect induced wear-out acceleration in ultra-thin oxides.
Microelectronics Reliability 41(7): 1031-1034 (2001) |
4 | EE | F. Monsieur,
E. Vincent,
G. Pananakakis,
G. Ghibaudo:
Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides.
Microelectronics Reliability 41(7): 1035-1039 (2001) |
3 | | F. Monsieur,
E. Vincent,
D. Roy,
S. Bruyère,
G. Pananakakis,
G. Ghibaudo:
Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions.
Microelectronics Reliability 41(9-10): 1295-1300 (2001) |
2 | | A. Bravaix,
D. Goguenheim,
N. Revil,
E. Vincent:
Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15mum Channel-Length N-MOSFETs.
Microelectronics Reliability 41(9-10): 1313-1318 (2001) |
1 | | S. Bruyère,
F. Monsieur,
D. Roy,
E. Vincent,
G. Ghibaudo:
Failures in ultrathin oxides: Stored energy or carrier energy driven?
Microelectronics Reliability 41(9-10): 1367-1372 (2001) |