| 2007 |
|---|
| 5 | EE | C. R. Parthasarathy,
A. Bravaix,
C. Guérin,
M. Denais,
V. Huard:
Design-In Reliability for 90-65nm CMOS Nodes Submitted to Hot-Carriers and NBTI Degradation.
PATMOS 2007: 191-200 |
| 2006 |
|---|
| 4 | EE | V. Huard,
M. Denais,
C. R. Parthasarathy:
NBTI degradation: From physical mechanisms to modelling.
Microelectronics Reliability 46(1): 1-23 (2006) |
| 3 | EE | C. R. Parthasarathy,
M. Denais,
V. Huard,
G. Ribes,
D. Roy,
C. Guérin,
F. Perrier,
E. Vincent,
A. Bravaix:
Designing in reliability in advanced CMOS technologies.
Microelectronics Reliability 46(9-11): 1464-1471 (2006) |
| 2005 |
|---|
| 2 | EE | V. Huard,
M. Denais,
F. Perrier,
N. Revil,
C. R. Parthasarathy,
A. Bravaix,
E. Vincent:
A thorough investigation of MOSFETs NBTI degradation.
Microelectronics Reliability 45(1): 83-98 (2005) |
| 1 | EE | A. Bravaix,
D. Goguenheim,
M. Denais,
V. Huard,
C. R. Parthasarathy,
F. Perrier,
N. Revil,
E. Vincent:
Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs.
Microelectronics Reliability 45(9-11): 1370-1375 (2005) |
