| 2006 |
|---|
| 6 | EE | Cora Salm,
A. J. Hof,
Fred G. Kuper,
J. Schmitz:
Reduced temperature dependence of hot carrier degradation in deuterated nMOSFETs.
Microelectronics Reliability 46(9-11): 1617-1622 (2006) |
| 2005 |
|---|
| 5 | EE | M. S. B. Sowariraj,
Theo Smedes,
Peter C. de Jong,
Cora Salm,
Ton J. Mouthaan,
Fred G. Kuper:
A 3-D Circuit Model to evaluate CDM performance of ICs.
Microelectronics Reliability 45(9-11): 1425-1429 (2005) |
| 2003 |
|---|
| 4 | EE | M. S. B. Sowariraj,
Theo Smedes,
Cora Salm,
Ton J. Mouthaan,
Fred G. Kuper:
Role of package parasitics and substrate resistance on the Charged Device Model (CDM) failure levels -An explanation and die protection strategy.
Microelectronics Reliability 43(9-11): 1569-1575 (2003) |
| 2002 |
|---|
| 3 | EE | M. S. B. Sowariraj,
Theo Smedes,
Cora Salm,
Ton J. Mouthaan,
Fred G. Kuper:
The influence of technology variation on ggNMOSTs and SCRs against CDM BSD stress.
Microelectronics Reliability 42(9-11): 1287-1292 (2002) |
| 2 | EE | H. V. Nguyen,
Cora Salm,
J. Vroemen,
J. Voets,
B. Krabbenborg,
J. Bisschop,
A. J. Mouthaan,
Fred G. Kuper:
Fast temperature cycling and electromigration induced thin film cracking in multilevel interconnection: experiments and modeling.
Microelectronics Reliability 42(9-11): 1415-1420 (2002) |
| 1 | EE | H. V. Nguyen,
Cora Salm,
R. Wenzel,
A. J. Mouthaan,
Fred G. Kuper:
Simulation and experimental characterization of reservoir and via layout effects on electromigration lifetime.
Microelectronics Reliability 42(9-11): 1421-1425 (2002) |
