| 2006 |
|---|
| 10 | EE | M. Meneghini,
Simona Podda,
A. Morelli,
Ruggero Pintus,
L. Trevisanello,
Gaudenzio Meneghesso,
Massimo Vanzi,
Enrico Zanoni:
High brightness GaN LEDs degradation during dc and pulsed stress.
Microelectronics Reliability 46(9-11): 1720-1724 (2006) |
| 9 | EE | Francesca Danesin,
F. Zanon,
Simone Gerardin,
F. Rampazzo,
Gaudenzio Meneghesso,
Enrico Zanoni,
Alessandro Paccagnella:
Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors.
Microelectronics Reliability 46(9-11): 1750-1753 (2006) |
| 2005 |
|---|
| 8 | EE | G. Verzellesi,
Gaudenzio Meneghesso,
A. Chini,
Enrico Zanoni,
C. Canali:
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues.
Microelectronics Reliability 45(9-11): 1585-1592 (2005) |
| 7 | EE | A. Tazzoli,
Gaudenzio Meneghesso,
Enrico Zanoni:
A novel fast and versatile temperature measurement system for LDMOS transistors.
Microelectronics Reliability 45(9-11): 1742-1745 (2005) |
| 2003 |
|---|
| 6 | EE | Gaudenzio Meneghesso,
N. Novembre,
Enrico Zanoni,
L. Sponton,
L. Cerati,
G. Croce:
Optimization of ESD protection structures suitable for BCD6 smart power technology.
Microelectronics Reliability 43(9-11): 1589-1594 (2003) |
| 5 | EE | Gaudenzio Meneghesso,
S. Levada,
Enrico Zanoni,
G. Scamarcio,
G. Mura,
Simona Podda,
Massimo Vanzi,
S. Du,
I. Eliashevich:
Reliability of visible GaN LEDs in plastic package.
Microelectronics Reliability 43(9-11): 1737-1742 (2003) |
| 2002 |
|---|
| 4 | EE | Gaudenzio Meneghesso,
Enrico Zanoni:
Failure modes and mechanisms of InP-based and metamorphic high electron mobility transistors.
Microelectronics Reliability 42(4-5): 685-708 (2002) |
| 3 | EE | Gaudenzio Meneghesso,
A. Cocco,
G. Mura,
Simona Podda,
Massimo Vanzi:
Backside Failure Analysis of GaAs ICs after ESD tests.
Microelectronics Reliability 42(9-11): 1293-1298 (2002) |
| 2 | EE | L. Sponton,
L. Cerati,
G. Croce,
G. Mura,
Simona Podda,
Massimo Vanzi,
Gaudenzio Meneghesso,
Enrico Zanoni:
ESD protection structures for 20 V and 40 V power supply suitable for BCD6 smart power technology.
Microelectronics Reliability 42(9-11): 1303-1306 (2002) |
| 2001 |
|---|
| 1 | | Gaudenzio Meneghesso,
Gaudenzio Chini,
Enrico Zanoni:
Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs.
Microelectronics Reliability 41(9-10): 1579-1584 (2001) |
