Shimpei Tsujikawa

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2005

1 EE Shimpei Tsujikawa, Jiro Yugami: Positive charge generation due to species of hydrogen during NBTI phenomenon in pMOSFETs with ultra-thin SiON gate dielectrics. Microelectronics Reliability 45(1): 65-69 (2005)

2005
1	EE	Shimpei Tsujikawa, Jiro Yugami: Positive charge generation due to species of hydrogen during NBTI phenomenon in pMOSFETs with ultra-thin SiON gate dielectrics. Microelectronics Reliability 45(1): 65-69 (2005)

Coauthor Index

1 Jiro Yugami [1]