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A. N. Nazarov

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2005
2EEV. I. Turchanikov, A. N. Nazarov, V. S. Lysenko, Josep Carreras, B. Garrido: Charge storage peculiarities in poly-Si-SiO2-Si memory devices with Si nanocrystals rich SiO2. Microelectronics Reliability 45(5-6): 903-906 (2005)
2002
1EEA. N. Nazarov, I. N. Osiyuk, V. S. Lysenko, T. Gebel, L. Rebohle, W. Skorupa: Charge trapping and degradation in Ge+ ion implanted SiO2 layers during high-field electron injection. Microelectronics Reliability 42(9-11): 1461-1464 (2002)

Coauthor Index

1Josep Carreras [2]
2B. Garrido [2]
3T. Gebel [1]
4V. S. Lysenko [1] [2]
5I. N. Osiyuk [1]
6L. Rebohle [1]
7W. Skorupa [1]
8V. I. Turchanikov [2]

Copyright © Sun May 17 03:24:02 2009 by Michael Ley (ley@uni-trier.de)