2008 |
13 | EE | Georges G. E. Gielen,
P. De Wit,
E. Maricau,
J. Loeckx,
J. Martin-Martinez,
Ben Kaczer,
Guido Groeseneken,
R. Rodríguez,
M. Nafría:
Emerging Yield and Reliability Challenges in Nanometer CMOS Technologies.
DATE 2008: 1322-1327 |
2006 |
12 | EE | S. Thijs,
M. Natarajan Iyer,
D. Linten,
Wutthinan Jeamsaksiri,
T. Daenen,
Robin Degraeve,
Andries Scholten,
Stefaan Decoutere,
Guido Groeseneken:
Implementation of plug-and-play ESD protection in 5.5GHz 90nm RF CMOS LNAs - Concepts, constraints and solutions.
Microelectronics Reliability 46(5-6): 702-712 (2006) |
11 | EE | R. Fernández,
R. Rodríguez,
M. Nafría,
X. Aymerich,
Ben Kaczer,
Guido Groeseneken:
FinFET and MOSFET preliminary comparison of gate oxide reliability.
Microelectronics Reliability 46(9-11): 1608-1611 (2006) |
2005 |
10 | EE | Vesselin K. Vassilev,
S. Thijs,
P. L. Segura,
P. Wambacq,
Paul Leroux,
Guido Groeseneken,
M. I. Natarajan,
H. E. Maes,
Michiel Steyaert:
ESD-RF co-design methodology for the state of the art RF-CMOS blocks.
Microelectronics Reliability 45(2): 255-268 (2005) |
9 | EE | Y.-L. Li,
Zs. Tökei,
Ph. Roussel,
Guido Groeseneken,
Karen Maex:
Layout dependency induced deviation from Poisson area scaling in BEOL dielectric reliability.
Microelectronics Reliability 45(9-11): 1299-1304 (2005) |
8 | EE | Vesselin K. Vassilev,
V. A. Vashchenko,
Ph. Jansen,
Guido Groeseneken,
M. ter Beek:
ESD circuit model based protection network optimisation for extended-voltage NMOS drivers.
Microelectronics Reliability 45(9-11): 1430-1435 (2005) |
2003 |
7 | EE | Vesselin K. Vassilev,
S. Jenei,
Guido Groeseneken,
R. Venegas,
S. Thijs,
V. De Heyn,
M. Natarajan Iyer,
Michiel Steyaert,
H. E. Maes:
High frequency characterization and modelling of the parasitic RC performance of two terminal ESD CMOS protection devices.
Microelectronics Reliability 43(7): 1011-1020 (2003) |
2002 |
6 | EE | Ben Kaczer,
Robin Degraeve,
M. Rasras,
A. De Keersgieter,
K. Van de Mieroop,
Guido Groeseneken:
Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study.
Microelectronics Reliability 42(4-5): 555-564 (2002) |
5 | EE | Bart Keppens,
V. De Heyn,
M. Natarajan Iyer,
Vesselin K. Vassilev,
Guido Groeseneken:
Significance of the failure criterion on transmission line pulse testing.
Microelectronics Reliability 42(6): 901-907 (2002) |
4 | EE | E. Andries,
R. Dreesen,
K. Croes,
Ward De Ceuninck,
Luc De Schepper,
Guido Groeseneken,
K. F. Lo,
Marc D'Olieslaeger,
Jan D'Haen:
Statistical aspects of the degradation of LDD nMOSFETs.
Microelectronics Reliability 42(9-11): 1409-1413 (2002) |
2001 |
3 | EE | K. Bock,
Bart Keppens,
V. De Heyn,
Guido Groeseneken,
L. Y. Ching,
A. Naem:
Influence of gate length on ESD-performance for deep submicron CMOS technology.
Microelectronics Reliability 41(3): 375-383 (2001) |
2 | EE | R. Dreesen,
K. Croes,
J. Manca,
Ward De Ceuninck,
Luc De Schepper,
A. Pergoot,
Guido Groeseneken:
A new degradation model and lifetime extrapolation technique for lightly doped drain nMOSFETs under hot-carrier degradation.
Microelectronics Reliability 41(3): 437-443 (2001) |
1999 |
1 | EE | Marc M. Heyns,
Twan Bearda,
Ingrid Cornelissen,
Stefan De Gendt,
Robin Degraeve,
Guido Groeseneken,
Conny Kenens,
D. Martin Knotter,
Lee M. Loewenstein,
Paul W. Mertens,
Sofie Mertens,
Marc Meuris,
Tanya Nigam,
Marc Schaekers,
Ivo Teerlinck,
Wilfried Vandervorst,
Rita Vos,
Klaus Wolke:
Cost-effective cleaning and high-quality thin gate oxides.
IBM Journal of Research and Development 43(3): 339-350 (1999) |