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X. Aymerich

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2006
10EER. Fernández, R. Rodríguez, M. Nafría, X. Aymerich, Ben Kaczer, Guido Groeseneken: FinFET and MOSFET preliminary comparison of gate oxide reliability. Microelectronics Reliability 46(9-11): 1608-1611 (2006)
2005
9EEX. Blasco, M. Nafría, X. Aymerich, J. Pétry, Wilfried Vandervorst: Breakdown spots of ultra-thin (EOT<1.5nm) HfO2/SiO2 stacks observed with enhanced - CAFM. Microelectronics Reliability 45(5-6): 811-814 (2005)
8EER. Fernández, R. Rodríguez, M. Nafría, X. Aymerich: Influence of oxide breakdown position and device aspect ratio on MOSFET's output characteristics. Microelectronics Reliability 45(5-6): 861-864 (2005)
7EEL. Aguilera, M. Porti, M. Nafría, X. Aymerich: Pre- and post-BD electrical conduction of stressed HfO2/SiO2 MOS gate stacks observed at the nanoscale. Microelectronics Reliability 45(9-11): 1390-1393 (2005)
2003
6EEM. Porti, S. Meli, M. Nafría, X. Aymerich: Pre-breakdown noise in electrically stressed thin SiO2 layers of MOS devices observed with C-AFM. Microelectronics Reliability 43(8): 1203-1209 (2003)
5EEM. Porti, M. Nafría, X. Aymerich: Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM. Microelectronics Reliability 43(9-11): 1501-1505 (2003)
2002
4EEX. Blasco, M. Nafría, X. Aymerich: Conduction and Breakdown Behaviour of Atomic Force Microscopy Grown SiO2 Gate Oxide on MOS Structures. Microelectronics Reliability 42(9-11): 1513-1516 (2002)
2001
3EER. Rodríguez, M. Porti, M. Nafría, X. Aymerich: Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO2 films. Microelectronics Reliability 41(7): 1011-1013 (2001)
2EEM. Porti, X. Blasco, M. Nafría, X. Aymerich, Alexander Olbrich, Bernd Ebersberger: Local current fluctuations before and after breakdown of thin SiO2 films observed with conductive atomic force microscope. Microelectronics Reliability 41(7): 1041-1044 (2001)
1EED. Hill, X. Blasco, M. Porti, M. Nafría, X. Aymerich: Characterising the surface roughness of AFM grown SiO2 on Si. Microelectronics Reliability 41(7): 1077-1079 (2001)

Coauthor Index

1L. Aguilera [7]
2X. Blasco [1] [2] [4] [9]
3Bernd Ebersberger [2]
4R. Fernández [8] [10]
5Guido Groeseneken [10]
6D. Hill [1]
7Ben Kaczer [10]
8S. Meli [6]
9M. Nafría [1] [2] [3] [4] [5] [6] [7] [8] [9] [10]
10Alexander Olbrich [2]
11J. Pétry [9]
12M. Porti [1] [2] [3] [5] [6] [7]
13R. Rodríguez [3] [8] [10]
14Wilfried Vandervorst [9]

Copyright © Sun May 17 03:24:02 2009 by Michael Ley (ley@uni-trier.de)