| |
| 2006 | ||
|---|---|---|
| 2 | EE | G. Busatto, F. Iannuzzo, A. Porzio, A. Sanseverino, F. Velardi, G. Currò: Experimental study of power MOSFET's gate damage in radiation environment. Microelectronics Reliability 46(9-11): 1854-1857 (2006) |
| 2005 | ||
| 1 | EE | G. Busatto, A. Porzio, F. Velardi, F. Iannuzzo, A. Sanseverino, G. Currò: Experimental and Numerical investigation about SEB/SEGR of Power MOSFET. Microelectronics Reliability 45(9-11): 1711-1716 (2005) |
| 1 | G. Busatto | [1] [2] |
| 2 | G. Currò | [1] [2] |
| 3 | F. Iannuzzo | [1] [2] |
| 4 | A. Sanseverino | [1] [2] |
| 5 | F. Velardi | [1] [2] |