| |
| 2006 | ||
|---|---|---|
| 2 | EE | R. Fernández, R. Rodríguez, M. Nafría, X. Aymerich, Ben Kaczer, Guido Groeseneken: FinFET and MOSFET preliminary comparison of gate oxide reliability. Microelectronics Reliability 46(9-11): 1608-1611 (2006) |
| 2005 | ||
| 1 | EE | R. Fernández, R. Rodríguez, M. Nafría, X. Aymerich: Influence of oxide breakdown position and device aspect ratio on MOSFET's output characteristics. Microelectronics Reliability 45(5-6): 861-864 (2005) |
| 1 | X. Aymerich | [1] [2] |
| 2 | Guido Groeseneken | [2] |
| 3 | Ben Kaczer | [2] |
| 4 | M. Nafría | [1] [2] |
| 5 | R. Rodríguez | [1] [2] |