| |
| 2005 | ||
|---|---|---|
| 2 | EE | V. I. Turchanikov, A. N. Nazarov, V. S. Lysenko, Josep Carreras, B. Garrido: Charge storage peculiarities in poly-Si-SiO2-Si memory devices with Si nanocrystals rich SiO2. Microelectronics Reliability 45(5-6): 903-906 (2005) |
| 2002 | ||
| 1 | EE | A. N. Nazarov, I. N. Osiyuk, V. S. Lysenko, T. Gebel, L. Rebohle, W. Skorupa: Charge trapping and degradation in Ge+ ion implanted SiO2 layers during high-field electron injection. Microelectronics Reliability 42(9-11): 1461-1464 (2002) |
| 1 | Josep Carreras | [2] |
| 2 | B. Garrido | [2] |
| 3 | T. Gebel | [1] |
| 4 | A. N. Nazarov | [1] [2] |
| 5 | I. N. Osiyuk | [1] |
| 6 | L. Rebohle | [1] |
| 7 | W. Skorupa | [1] |
| 8 | V. I. Turchanikov | [2] |