| 2005 |
|---|
| 4 | EE | E. Atanassova,
R. V. Konakova,
V. F. Mitin,
J. Koprinarova,
O. S. Lytvym,
O. B. Okhrimenko,
V. V. Schinkarenko,
D. Virovska:
Effect of microwave radiation on the properties of Ta2O5-Si microstructures.
Microelectronics Reliability 45(1): 123-135 (2005) |
| 2003 |
|---|
| 3 | EE | M. Pecovska-Gjorgjevich,
N. Novkovski,
E. Atanassova:
Electrical properties of thin RF sputtered Ta2O5 films after constant current stress.
Microelectronics Reliability 43(2): 235-241 (2003) |
| 2002 |
|---|
| 2 | EE | E. Atanassova,
A. Paskaleva:
Breakdown fields and conduction mechanisms in thin Ta2O5 layers on Si for high density DRAMs.
Microelectronics Reliability 42(2): 157-173 (2002) |
| 1 | EE | E. Atanassova,
Dejan Spasov:
Thermal Ta2O5--alternative to SiO2 for storage capacitor application.
Microelectronics Reliability 42(8): 1171-1177 (2002) |
