| 2006 |
|---|
| 3 | EE | G. Busatto,
F. Iannuzzo,
A. Porzio,
A. Sanseverino,
F. Velardi,
G. Currò:
Experimental study of power MOSFET's gate damage in radiation environment.
Microelectronics Reliability 46(9-11): 1854-1857 (2006) |
| 2005 |
|---|
| 2 | EE | G. Busatto,
A. Porzio,
F. Velardi,
F. Iannuzzo,
A. Sanseverino,
G. Currò:
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET.
Microelectronics Reliability 45(9-11): 1711-1716 (2005) |
| 2003 |
|---|
| 1 | EE | F. Velardi,
F. Iannuzzo,
G. Busatto,
J. Wyss,
A. Sanseverino,
A. Candelori,
G. Currò,
A. Cascio,
F. Frisina:
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment.
Microelectronics Reliability 43(9-11): 1847-1851 (2003) |
