2006 |
4 | EE | J. M. Rafí,
E. Simoen,
K. Hayama,
A. Mercha,
F. Campabadal,
H. Ohyama,
C. Claeys:
Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs.
Microelectronics Reliability 46(9-11): 1657-1663 (2006) |
3 | EE | K. Hayama,
K. Takakura,
K. Shigaki,
H. Ohyama,
J. M. Rafí,
A. Mercha,
E. Simoen,
C. Claeys:
Impact on the back gate degradation in partially depleted SOI n-MOSFETs by 2-MeV electron irradiation.
Microelectronics Reliability 46(9-11): 1731-1735 (2006) |
2005 |
2 | EE | K. Hayama,
K. Takakura,
H. Ohyama,
S. Kuboyama,
S. Matsuda,
J. M. Rafí,
A. Mercha,
E. Simoen,
C. Claeys:
Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETs.
Microelectronics Reliability 45(9-11): 1376-1381 (2005) |
2002 |
1 | EE | J. M. Rafí,
B. Vergnet,
F. Campabadal,
C. Fleta,
L. Fonseca,
M. Lozano,
C. Martínez,
M. Ullán:
Electrical characteristics of high-energy proton irradiated ultra-thin gate oxides.
Microelectronics Reliability 42(9-11): 1501-1504 (2002) |