| 2006 |
|---|
| 8 | EE | Gerald Lucovsky,
H. Seo,
L. B. Fleming,
M. D. Ulrich,
J. Lüning,
Patrick Lysaght,
Gennadi Bersuker:
Intrinsic bonding defects in transition metal elemental oxides.
Microelectronics Reliability 46(9-11): 1623-1628 (2006) |
| 2005 |
|---|
| 7 | EE | Gerald Lucovsky,
J. C. Phillips:
Bond strain and defects at interfaces in high-k gate stacks.
Microelectronics Reliability 45(5-6): 770-778 (2005) |
| 6 | EE | Gerald Lucovsky,
J. G. Hong,
C. C. Fulton,
N. A. Stoute,
Y. Zou,
R. J. Nemanich,
D. E. Aspnes,
H. Ade,
D. G. Schlom:
Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra.
Microelectronics Reliability 45(5-6): 827-830 (2005) |
| 2004 |
|---|
| 5 | EE | Yi-Mu Lee,
Yider Wu,
Gerald Lucovsky:
Breakdown and reliability of p-MOS devices with stacked RPECVD oxide/nitride gate dielectric under constant voltage stress.
Microelectronics Reliability 44(2): 207-212 (2004) |
| 2003 |
|---|
| 4 | EE | Gerald Lucovsky:
Electronic structure of transition metal/rare earth alternative high-K gate dielectrics: interfacial band alignments and intrinsic defects.
Microelectronics Reliability 43(9-11): 1417-1426 (2003) |
| 2002 |
|---|
| 3 | EE | Carlton M. Osburn,
Indong Kim,
Sungkee Han,
Indranil De,
Kam F. Yee,
Shyam Gannavaram,
SungJoo Lee,
Chung-Ho Lee,
Zhijiong J. Luo,
Wenjuan Zhu,
John R. Hauser,
Dim-Lee Kwong,
Gerald Lucovsky,
T. P. Ma,
Mehmet C. Öztürk:
Vertically scaled MOSFET gate stacks and junctions: How far are we likely to go?
IBM Journal of Research and Development 46(2-3): 299-316 (2002) |
| 2001 |
|---|
| 2 | EE | Gerald Lucovsky,
Gilbert B. Rayner,
Robert S. Johnson:
Chemical and physical limits on the performance of metal silicate high-k gate dielectrics.
Microelectronics Reliability 41(7): 937-945 (2001) |
| 1999 |
|---|
| 1 | EE | Gerald Lucovsky:
Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliability.
IBM Journal of Research and Development 43(3): 301-326 (1999) |
