2005 |
21 | EE | G. Ribes,
S. Bruyère,
M. Denais,
F. Monsieur,
V. Huard,
D. Roy,
G. Ghibaudo:
Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides.
Microelectronics Reliability 45(12): 1842-1854 (2005) |
20 | EE | G. Ribes,
S. Bruyère,
M. Denais,
D. Roy,
G. Ghibaudo:
Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown.
Microelectronics Reliability 45(5-6): 841-844 (2005) |
19 | EE | D. Bauza,
F. Rahmoune,
R. Laqli,
G. Ghibaudo:
On the SILC mechanism in MOSFET's with ultrathin oxides.
Microelectronics Reliability 45(5-6): 849-852 (2005) |
18 | EE | E. Deloffre,
L. Montès,
G. Ghibaudo,
S. Bruyère,
S. Blonkowski,
S. Bécu,
M. Gros-Jean,
S. Crémer:
Electrical properties in low temperature range (5K-300K) of Tantalum Oxide dielectric MIM capacitors.
Microelectronics Reliability 45(5-6): 925-928 (2005) |
2003 |
17 | EE | G. Ghibaudo,
E. Vincent:
Guest Editorial.
Microelectronics Reliability 43(8): 1173 (2003) |
16 | EE | F. Monsieur,
E. Vincent,
V. Huard,
S. Bruyère,
D. Roy,
Thomas Skotnicki,
G. Pananakakis,
G. Ghibaudo:
On the role of holes in oxide breakdown mechanism in inverted nMOSFETs.
Microelectronics Reliability 43(8): 1199-1202 (2003) |
15 | EE | M. Fadlallah,
C. Petit,
A. Meinertzhagen,
G. Ghibaudo,
M. Bidaud,
O. Simonetti,
F. Guyader:
Influence of nitradation in ultra-thin oxide on the gate current degradation of N and PMOS devices.
Microelectronics Reliability 43(9-11): 1433-1438 (2003) |
14 | EE | F. Lime,
G. Ghibaudo,
B. Guillaumot:
Charge trapping in SiO2/HfO2/TiN gate stack.
Microelectronics Reliability 43(9-11): 1445-1448 (2003) |
2002 |
13 | EE | M. Fadlallah,
G. Ghibaudo,
J. Jomaah,
M. Zoaeter,
G. Guégan:
Static and low frequency noise characterization of surface- and buried-mode 0.1 mum P and N MOSFETs.
Microelectronics Reliability 42(1): 41-46 (2002) |
12 | EE | G. Ghibaudo,
T. Boutchacha:
Electrical noise and RTS fluctuations in advanced CMOS devices.
Microelectronics Reliability 42(4-5): 573-582 (2002) |
11 | EE | B. Cretu,
F. Balestra,
G. Ghibaudo,
G. Guégan:
Origin of hot carrier degradation in advanced nMOSFET devices.
Microelectronics Reliability 42(9-11): 1405-1408 (2002) |
10 | EE | F. Monsieur,
E. Vincent,
D. Roy,
S. Bruyère,
G. Pananakakis,
G. Ghibaudo:
Gate oxide Reliability assessment optimization.
Microelectronics Reliability 42(9-11): 1505-1508 (2002) |
2001 |
9 | EE | S. Haendler,
J. Jomaah,
G. Ghibaudo,
F. Balestra:
Improved analysis of low frequency noise in dynamic threshold MOS/SOI transistors.
Microelectronics Reliability 41(6): 855-860 (2001) |
8 | EE | R. Clerc,
A. S. Spinelli,
G. Ghibaudo,
C. Leroux,
G. Pananakakis:
Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4-3 nm).
Microelectronics Reliability 41(7): 1027-1030 (2001) |
7 | EE | S. Bruyère,
D. Roy,
E. Robilliart,
E. Vincent,
G. Ghibaudo:
Body effect induced wear-out acceleration in ultra-thin oxides.
Microelectronics Reliability 41(7): 1031-1034 (2001) |
6 | EE | F. Monsieur,
E. Vincent,
G. Pananakakis,
G. Ghibaudo:
Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides.
Microelectronics Reliability 41(7): 1035-1039 (2001) |
5 | EE | P. O'Sullivan,
R. Clerc,
Kevin G. McCarthy,
Alan Mathewson,
G. Ghibaudo:
Direct tunnelling models for circuit simulation.
Microelectronics Reliability 41(7): 951-957 (2001) |
4 | | F. Monsieur,
E. Vincent,
D. Roy,
S. Bruyère,
G. Pananakakis,
G. Ghibaudo:
Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions.
Microelectronics Reliability 41(9-10): 1295-1300 (2001) |
3 | | M. Fadlallah,
A. Szewczyk,
C. Giannakopoulos,
B. Cretu,
F. Monsieur,
T. Devoivre,
J. Jomaah,
G. Ghibaudo:
Low frequency noise and reliability properties pf 0.12 mum CMOS devices with Ta2O5 as gate dielectrics.
Microelectronics Reliability 41(9-10): 1361-1366 (2001) |
2 | | S. Bruyère,
F. Monsieur,
D. Roy,
E. Vincent,
G. Ghibaudo:
Failures in ultrathin oxides: Stored energy or carrier energy driven?
Microelectronics Reliability 41(9-10): 1367-1372 (2001) |
1 | | F. Lime,
G. Ghibaudo,
G. Guégan:
Stress induced leakage current at low field in ultra thin oxides.
Microelectronics Reliability 41(9-10): 1421-1425 (2001) |