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G. Ghibaudo

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2005
21EEG. Ribes, S. Bruyère, M. Denais, F. Monsieur, V. Huard, D. Roy, G. Ghibaudo: Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides. Microelectronics Reliability 45(12): 1842-1854 (2005)
20EEG. Ribes, S. Bruyère, M. Denais, D. Roy, G. Ghibaudo: Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown. Microelectronics Reliability 45(5-6): 841-844 (2005)
19EED. Bauza, F. Rahmoune, R. Laqli, G. Ghibaudo: On the SILC mechanism in MOSFET's with ultrathin oxides. Microelectronics Reliability 45(5-6): 849-852 (2005)
18EEE. Deloffre, L. Montès, G. Ghibaudo, S. Bruyère, S. Blonkowski, S. Bécu, M. Gros-Jean, S. Crémer: Electrical properties in low temperature range (5K-300K) of Tantalum Oxide dielectric MIM capacitors. Microelectronics Reliability 45(5-6): 925-928 (2005)
2003
17EEG. Ghibaudo, E. Vincent: Guest Editorial. Microelectronics Reliability 43(8): 1173 (2003)
16EEF. Monsieur, E. Vincent, V. Huard, S. Bruyère, D. Roy, Thomas Skotnicki, G. Pananakakis, G. Ghibaudo: On the role of holes in oxide breakdown mechanism in inverted nMOSFETs. Microelectronics Reliability 43(8): 1199-1202 (2003)
15EEM. Fadlallah, C. Petit, A. Meinertzhagen, G. Ghibaudo, M. Bidaud, O. Simonetti, F. Guyader: Influence of nitradation in ultra-thin oxide on the gate current degradation of N and PMOS devices. Microelectronics Reliability 43(9-11): 1433-1438 (2003)
14EEF. Lime, G. Ghibaudo, B. Guillaumot: Charge trapping in SiO2/HfO2/TiN gate stack. Microelectronics Reliability 43(9-11): 1445-1448 (2003)
2002
13EEM. Fadlallah, G. Ghibaudo, J. Jomaah, M. Zoaeter, G. Guégan: Static and low frequency noise characterization of surface- and buried-mode 0.1 mum P and N MOSFETs. Microelectronics Reliability 42(1): 41-46 (2002)
12EEG. Ghibaudo, T. Boutchacha: Electrical noise and RTS fluctuations in advanced CMOS devices. Microelectronics Reliability 42(4-5): 573-582 (2002)
11EEB. Cretu, F. Balestra, G. Ghibaudo, G. Guégan: Origin of hot carrier degradation in advanced nMOSFET devices. Microelectronics Reliability 42(9-11): 1405-1408 (2002)
10EEF. Monsieur, E. Vincent, D. Roy, S. Bruyère, G. Pananakakis, G. Ghibaudo: Gate oxide Reliability assessment optimization. Microelectronics Reliability 42(9-11): 1505-1508 (2002)
2001
9EES. Haendler, J. Jomaah, G. Ghibaudo, F. Balestra: Improved analysis of low frequency noise in dynamic threshold MOS/SOI transistors. Microelectronics Reliability 41(6): 855-860 (2001)
8EER. Clerc, A. S. Spinelli, G. Ghibaudo, C. Leroux, G. Pananakakis: Electrical characterization and quantum modeling of MOS capacitors with ultra-thin oxides (1.4-3 nm). Microelectronics Reliability 41(7): 1027-1030 (2001)
7EES. Bruyère, D. Roy, E. Robilliart, E. Vincent, G. Ghibaudo: Body effect induced wear-out acceleration in ultra-thin oxides. Microelectronics Reliability 41(7): 1031-1034 (2001)
6EEF. Monsieur, E. Vincent, G. Pananakakis, G. Ghibaudo: Wear-out, breakdown occurrence and failure detection in 18-25 Å ultrathin oxides. Microelectronics Reliability 41(7): 1035-1039 (2001)
5EEP. O'Sullivan, R. Clerc, Kevin G. McCarthy, Alan Mathewson, G. Ghibaudo: Direct tunnelling models for circuit simulation. Microelectronics Reliability 41(7): 951-957 (2001)
4 F. Monsieur, E. Vincent, D. Roy, S. Bruyère, G. Pananakakis, G. Ghibaudo: Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions. Microelectronics Reliability 41(9-10): 1295-1300 (2001)
3 M. Fadlallah, A. Szewczyk, C. Giannakopoulos, B. Cretu, F. Monsieur, T. Devoivre, J. Jomaah, G. Ghibaudo: Low frequency noise and reliability properties pf 0.12 mum CMOS devices with Ta2O5 as gate dielectrics. Microelectronics Reliability 41(9-10): 1361-1366 (2001)
2 S. Bruyère, F. Monsieur, D. Roy, E. Vincent, G. Ghibaudo: Failures in ultrathin oxides: Stored energy or carrier energy driven? Microelectronics Reliability 41(9-10): 1367-1372 (2001)
1 F. Lime, G. Ghibaudo, G. Guégan: Stress induced leakage current at low field in ultra thin oxides. Microelectronics Reliability 41(9-10): 1421-1425 (2001)

Coauthor Index

1F. Balestra [9] [11]
2D. Bauza [19]
3S. Bécu [18]
4M. Bidaud [15]
5S. Blonkowski [18]
6T. Boutchacha [12]
7S. Bruyère [2] [4] [7] [10] [16] [18] [20] [21]
8R. Clerc [5] [8]
9S. Crémer [18]
10B. Cretu [3] [11]
11E. Deloffre [18]
12M. Denais [20] [21]
13T. Devoivre [3]
14M. Fadlallah [3] [13] [15]
15C. Giannakopoulos [3]
16M. Gros-Jean [18]
17G. Guégan [1] [11] [13]
18B. Guillaumot [14]
19F. Guyader [15]
20S. Haendler [9]
21V. Huard [16] [21]
22J. Jomaah [3] [9] [13]
23R. Laqli [19]
24C. Leroux [8]
25F. Lime [1] [14]
26Alan Mathewson [5]
27Kevin G. McCarthy [5]
28A. Meinertzhagen [15]
29F. Monsieur [2] [3] [4] [6] [10] [16] [21]
30L. Montès [18]
31P. O'Sullivan [5]
32G. Pananakakis [4] [6] [8] [10] [16]
33C. Petit [15]
34F. Rahmoune [19]
35G. Ribes [20] [21]
36E. Robilliart [7]
37D. Roy [2] [4] [7] [10] [16] [20] [21]
38O. Simonetti [15]
39Thomas Skotnicki [16]
40A. S. Spinelli [8]
41A. Szewczyk [3]
42E. Vincent [2] [4] [6] [7] [10] [16] [17]
43M. Zoaeter [13]

Colors in the list of coauthors

Copyright © Sun May 17 03:24:02 2009 by Michael Ley (ley@uni-trier.de)