| 2005 |
|---|
| 7 | EE | C. F. Tsang,
C. K. Chang,
A. Krishnamoorthy,
K. Y. Ee,
Y. J. Su,
H. Y. Li,
W. H. Li,
L. Y. Wong:
A study of post-etch wet clean on electrical and reliability performance of Cu/low k interconnections.
Microelectronics Reliability 45(3-4): 517-525 (2005) |
| 6 | EE | H. Y. Li,
Y. J. Su,
C. F. Tsang,
S. M. Sohan,
V. N. Bliznetsov,
L. Zhang:
Process improvement of 0.13mum Cu/Low K (Black DiamondTM) dual damascene interconnection.
Microelectronics Reliability 45(7-8): 1134-1143 (2005) |
| 2004 |
|---|
| 5 | EE | C. F. Tsang,
C. Y. Li,
A. Krishnamoorthy,
Y. J. Su,
H. Y. Li,
L. Y. Wong,
W. H. Li,
L. J. Tang,
K. Y. Ee:
Impact of barrier deposition process on electrical and reliability performance of Cu/CVD low k SiOCH metallization.
Microelectronics Journal 35(9): 693-700 (2004) |
| 2003 |
|---|
| 4 | EE | C. F. Tsang,
V. N. Bliznetsov,
Y. J. Su:
Study and improvement of electrical performance of 130 nm Cu/CVD low k SiOCH interconnect related to via etch process.
Microelectronics Journal 34(11): 1051-1058 (2003) |
| 3 | EE | Y. S. Zheng,
Q. Guo,
Y. J. Su,
P. D. Foo:
Polymer residue chemical composition analysis and its effect on via contact resistance in dual damascene copper interconnects process integration.
Microelectronics Journal 34(2): 109-113 (2003) |
| 2 | EE | Y. J. Su,
S. Arisawa,
Y. Takano,
A. Ishii,
T. Hatano,
K. Togano:
Study on the growth mechanism of Bi-2212 ribbon-like thin films on flat Ag substrate by the atomization technique.
Microelectronics Journal 34(5-8): 679-681 (2003) |
| 1 | EE | Y. S. Zheng,
Y. J. Su,
B. Yu,
P. D. Foo:
Investigation of defect on copper bond pad surface in copper/low k process integration.
Microelectronics Reliability 43(8): 1311-1316 (2003) |
