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S. Djoric-Veljkovic

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2006
7EED. Dankovic, I. Manic, S. Djoric-Veljkovic, V. Davidovic, S. Golubovic, Ninoslav Stojadinovic: NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs. Microelectronics Reliability 46(9-11): 1828-1833 (2006)
2005
6EENinoslav Stojadinovic, I. Manic, V. Davidovic, D. Dankovic, S. Djoric-Veljkovic, S. Golubovic, S. Dimitrijev: Effects of electrical stressing in power VDMOSFETs. Microelectronics Reliability 45(1): 115-122 (2005)
5EENinoslav Stojadinovic, D. Dankovic, S. Djoric-Veljkovic, V. Davidovic, I. Manic, S. Golubovic: Negative bias temperature instability mechanisms in p-channel power VDMOSFETs. Microelectronics Reliability 45(9-11): 1343-1348 (2005)
2003
4EES. Djoric-Veljkovic, I. Manic, V. Davidovic, S. Golubovic, Ninoslav Stojadinovic: Effects of burn-in stressing on post-irradiation annealing response of power VDMOSFETs. Microelectronics Reliability 43(9-11): 1455-1460 (2003)
2002
3EENinoslav Stojadinovic, I. Manic, S. Djoric-Veljkovic, V. Davidovic, S. Golubovic, S. Dimitrijev: Effects of high electric field and elevated-temperature bias stressing on radiation response in power VDMOSFETs. Microelectronics Reliability 42(4-5): 669-677 (2002)
2EENinoslav Stojadinovic, I. Manic, S. Djoric-Veljkovic, V. Davidovic, D. Dankovic, S. Golubovic, S. Dimitrijev: Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs. Microelectronics Reliability 42(9-11): 1465-1468 (2002)
2001
1 Ninoslav Stojadinovic, I. Manic, S. Djoric-Veljkovic, V. Davidovic, S. Golubovic, S. Dimitrijev: Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs. Microelectronics Reliability 41(9-10): 1373-1378 (2001)

Coauthor Index

1D. Dankovic [2] [5] [6] [7]
2V. Davidovic [1] [2] [3] [4] [5] [6] [7]
3S. Dimitrijev [1] [2] [3] [6]
4S. Golubovic [1] [2] [3] [4] [5] [6] [7]
5I. Manic [1] [2] [3] [4] [5] [6] [7]
6Ninoslav Stojadinovic [1] [2] [3] [4] [5] [6] [7]

Copyright © Sun May 17 03:24:02 2009 by Michael Ley (ley@uni-trier.de)