| |
| 2005 | ||
|---|---|---|
| 5 | EE | Rolf-Peter Vollertsen, Enrique Miranda: The TDDB power-law model - Physics and experimental evidences. Microelectronics Reliability 45(12): 1807-1808 (2005) |
| 4 | EE | Rainer Duschl, Rolf-Peter Vollertsen: Is the power-law model applicable beyond the direct tunneling regime? Microelectronics Reliability 45(12): 1861-1867 (2005) |
| 2004 | ||
| 3 | EE | Rolf-Peter Vollertsen: Fast wafer level reliability: methods and experiences. Microelectronics Reliability 44(8): 1207-1208 (2004) |
| 2 | EE | Andreas Martin, Rolf-Peter Vollertsen: An introduction to fast wafer level reliability monitoring for integrated circuit mass production. Microelectronics Reliability 44(8): 1209-1231 (2004) |
| 2002 | ||
| 1 | EE | Fen Chen, Rolf-Peter Vollertsen, Baozhen Li, Dave Harmon, Wing L. Lai: A new empirical extrapolation method for time-dependent dielectric breakdown reliability projections of thin SiO2 and nitride-oxide dielectrics. Microelectronics Reliability 42(3): 335-341 (2002) |
| 1 | Fen Chen | [1] |
| 2 | Rainer Duschl | [4] |
| 3 | Dave Harmon | [1] |
| 4 | Wing L. Lai | [1] |
| 5 | Baozhen Li | [1] |
| 6 | Andreas Martin | [2] |
| 7 | Enrique Miranda | [5] |