| 2006 |
|---|
| 7 | EE | D. Dankovic,
I. Manic,
S. Djoric-Veljkovic,
V. Davidovic,
S. Golubovic,
Ninoslav Stojadinovic:
NBT stress-induced degradation and lifetime estimation in p-channel power VDMOSFETs.
Microelectronics Reliability 46(9-11): 1828-1833 (2006) |
| 2005 |
|---|
| 6 | EE | Ninoslav Stojadinovic,
I. Manic,
V. Davidovic,
D. Dankovic,
S. Djoric-Veljkovic,
S. Golubovic,
S. Dimitrijev:
Effects of electrical stressing in power VDMOSFETs.
Microelectronics Reliability 45(1): 115-122 (2005) |
| 5 | EE | Ninoslav Stojadinovic,
D. Dankovic,
S. Djoric-Veljkovic,
V. Davidovic,
I. Manic,
S. Golubovic:
Negative bias temperature instability mechanisms in p-channel power VDMOSFETs.
Microelectronics Reliability 45(9-11): 1343-1348 (2005) |
| 2003 |
|---|
| 4 | EE | S. Djoric-Veljkovic,
I. Manic,
V. Davidovic,
S. Golubovic,
Ninoslav Stojadinovic:
Effects of burn-in stressing on post-irradiation annealing response of power VDMOSFETs.
Microelectronics Reliability 43(9-11): 1455-1460 (2003) |
| 2002 |
|---|
| 3 | EE | Ninoslav Stojadinovic,
I. Manic,
S. Djoric-Veljkovic,
V. Davidovic,
S. Golubovic,
S. Dimitrijev:
Effects of high electric field and elevated-temperature bias stressing on radiation response in power VDMOSFETs.
Microelectronics Reliability 42(4-5): 669-677 (2002) |
| 2 | EE | Ninoslav Stojadinovic,
I. Manic,
S. Djoric-Veljkovic,
V. Davidovic,
D. Dankovic,
S. Golubovic,
S. Dimitrijev:
Mechanisms of spontaneous recovery in positive gate bias stressed power VDMOSFETs.
Microelectronics Reliability 42(9-11): 1465-1468 (2002) |
| 2001 |
|---|
| 1 | | Ninoslav Stojadinovic,
I. Manic,
S. Djoric-Veljkovic,
V. Davidovic,
S. Golubovic,
S. Dimitrijev:
Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs.
Microelectronics Reliability 41(9-10): 1373-1378 (2001) |
