G. Ghidini

2006
11	EE	Simone Gerardin, A. Griffoni, A. Cester, Alessandro Paccagnella, G. Ghidini: Degradation of static and dynamic behavior of CMOS inverters during constant and pulsed voltage stress. Microelectronics Reliability 46(9-11): 1669-1672 (2006)
2005
10	EE	G. Ghidini, M. Langenbuch, R. Bottini, D. Brazzelli, A. Ghetti, N. Galbiati, G. Giusto, A. Garavaglia: Impact of interface and bulk trapped charges on transistor reliability. Microelectronics Reliability 45(5-6): 857-860 (2005)
9	EE	M. Langenbuch, R. Bottini, M. E. Vitali, G. Ghidini: In situ steam generation (ISSG) versus standard steam technology: impact on oxide reliability. Microelectronics Reliability 45(5-6): 875-878 (2005)
8	EE	G. Ghidini, C. Capolupo, G. Giusto, A. Sebastiani, B. Stragliati, M. Vitali: Tunnel oxide degradation under pulsed stress. Microelectronics Reliability 45(9-11): 1337-1342 (2005)
2003
7	EE	G. Ghidini, A. Garavaglia, G. Giusto, A. Ghetti, R. Bottini, D. Peschiaroli, M. Scaravaggi, F. Cazzaniga, D. Ielmini: Impact of gate stack process on conduction and reliability of 0.18 mum PMOSFET. Microelectronics Reliability 43(8): 1221-1227 (2003)
6	EE	A. Ghetti, D. Brazzelli, A. Benvenuti, G. Ghidini, A. Pavan: Anomalous gate oxide conduction on isolation edges: analysis and process optimization. Microelectronics Reliability 43(8): 1229-1235 (2003)
5	EE	S. Cimino, A. Cester, Alessandro Paccagnella, G. Ghidini: Ionising radiation effects on MOSFET drain current. Microelectronics Reliability 43(8): 1247-1251 (2003)
2002
4	EE	G. Ghidini, D. Brazzelli: Evaluation methodology of thin dielectrics for non-volatile memory application. Microelectronics Reliability 42(9-11): 1473-1480 (2002)
3	EE	E. Viganò, A. Ghetti, G. Ghidini, A. S. Spinelli: Post-breakdown characterization in thin gate oxides. Microelectronics Reliability 42(9-11): 1491-1496 (2002)
2001
2	EE	D. Brazzelli, G. Ghidini, C. Riva: Optimization of WSi2 by SiH4 CVD: impact on oxide quality. Microelectronics Reliability 41(7): 1003-1006 (2001)
1	EE	N. Galbiati, G. Ghidini, C. Cremonesi, L. Larcher: Impact of the As dose in 0.35 mum EEPROM technology: characterization and modeling. Microelectronics Reliability 41(7): 999-1002 (2001)

Coauthor Index

1	A. Benvenuti	[6]
2	R. Bottini	[7] [9] [10]
3	D. Brazzelli	[2] [4] [6] [10]
4	C. Capolupo	[8]
5	F. Cazzaniga	[7]
6	A. Cester	[5] [11]
7	S. Cimino	[5]
8	C. Cremonesi	[1]
9	N. Galbiati	[1] [10]
10	A. Garavaglia	[7] [10]
11	Simone Gerardin	[11]
12	A. Ghetti	[3] [6] [7] [10]
13	G. Giusto	[7] [8] [10]
14	A. Griffoni	[11]
15	D. Ielmini	[7]
16	M. Langenbuch	[9] [10]
17	L. Larcher	[1]
18	Alessandro Paccagnella	[5] [11]
19	A. Pavan	[6]
20	D. Peschiaroli	[7]
21	C. Riva	[2]
22	M. Scaravaggi	[7]
23	A. Sebastiani	[8]
24	A. S. Spinelli	[3]
25	B. Stragliati	[8]
26	E. Viganò	[3]
27	M. Vitali	[8]
28	M. E. Vitali	[9]

Colors in the list of coauthors