2005 |
4 | EE | C. Petit,
A. Meinertzhagen,
D. Zander,
O. Simonetti,
M. Fadlallah,
T. Maurel:
Low voltage SILC and P- and N-MOSFET gate oxide reliability.
Microelectronics Reliability 45(3-4): 479-485 (2005) |
2003 |
3 | EE | M. Fadlallah,
C. Petit,
A. Meinertzhagen,
G. Ghibaudo,
M. Bidaud,
O. Simonetti,
F. Guyader:
Influence of nitradation in ultra-thin oxide on the gate current degradation of N and PMOS devices.
Microelectronics Reliability 43(9-11): 1433-1438 (2003) |
2002 |
2 | EE | M. Fadlallah,
G. Ghibaudo,
J. Jomaah,
M. Zoaeter,
G. Guégan:
Static and low frequency noise characterization of surface- and buried-mode 0.1 mum P and N MOSFETs.
Microelectronics Reliability 42(1): 41-46 (2002) |
2001 |
1 | | M. Fadlallah,
A. Szewczyk,
C. Giannakopoulos,
B. Cretu,
F. Monsieur,
T. Devoivre,
J. Jomaah,
G. Ghibaudo:
Low frequency noise and reliability properties pf 0.12 mum CMOS devices with Ta2O5 as gate dielectrics.
Microelectronics Reliability 41(9-10): 1361-1366 (2001) |