2005 | ||
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1 | EE | Gerald Lucovsky, J. G. Hong, C. C. Fulton, N. A. Stoute, Y. Zou, R. J. Nemanich, D. E. Aspnes, H. Ade, D. G. Schlom: Conduction band states of transition metal (TM) high-k gate dielectrics as determined from X-ray absorption spectra. Microelectronics Reliability 45(5-6): 827-830 (2005) |
1 | D. E. Aspnes | [1] |
2 | C. C. Fulton | [1] |
3 | J. G. Hong | [1] |
4 | Gerald Lucovsky | [1] |
5 | R. J. Nemanich | [1] |
6 | D. G. Schlom | [1] |
7 | N. A. Stoute | [1] |
8 | Y. Zou | [1] |