| 2007 |
|---|
| 14 | EE | Giovanna Sozzi,
Roberto Menozzi:
A review of the use of electro-thermal simulations for the analysis of heterostructure FETs.
Microelectronics Reliability 47(1): 65-73 (2007) |
| 2006 |
|---|
| 13 | EE | P. Cova,
Roberto Menozzi,
M. Portesine:
Experimental and numerical study of the recovery softness and overvoltage dependence on p-i-n diode design.
Microelectronics Journal 37(5): 409-416 (2006) |
| 12 | EE | Peter Ersland,
Roberto Menozzi:
Editorial.
Microelectronics Reliability 46(8): 1217 (2006) |
| 11 | EE | P. Cova,
N. Delmonte,
Roberto Menozzi:
Thermal characterization and modeling of power hybrid converters for distributed power systems.
Microelectronics Reliability 46(9-11): 1760-1765 (2006) |
| 2005 |
|---|
| 10 | EE | Peter Ersland,
Roberto Menozzi:
Editorial.
Microelectronics Reliability 45(12): 1868 (2005) |
| 9 | EE | P. Cova,
N. Delmonte,
Roberto Menozzi:
On state breakdown in PHEMTs and its temperature dependence.
Microelectronics Reliability 45(9-11): 1605-1610 (2005) |
| 2004 |
|---|
| 8 | EE | Peter Ersland,
Roberto Menozzi:
Editorial.
Microelectronics Reliability 44(7): 1031 (2004) |
| 2003 |
|---|
| 7 | EE | P. Cova,
Roberto Menozzi,
M. Portesine:
Power p-i-n diodes for snubberless application: H+ irradiation for soft and reliable reverse recovery.
Microelectronics Reliability 43(1): 81-87 (2003) |
| 6 | EE | Wallace T. Anderson,
Roberto Menozzi:
Editorial.
Microelectronics Reliability 43(6): 821 (2003) |
| 2002 |
|---|
| 5 | EE | Giovanna Sozzi,
Roberto Menozzi:
High-electric-field effects and degradation of AlGaAs/GaAs power HFETs: a numerical study.
Microelectronics Reliability 42(1): 53-59 (2002) |
| 4 | EE | Wallace T. Anderson,
Roberto Menozzi:
Editorial.
Microelectronics Reliability 42(7): 995 (2002) |
| 3 | EE | P. Cova,
Roberto Menozzi,
M. Dammann,
T. Feltgen,
W. Jantz:
High-field step-stress and long term stability of PHEMTs with different gate and recess lengths.
Microelectronics Reliability 42(9-11): 1587-1592 (2002) |
| 2001 |
|---|
| 2 | EE | M. Borgarino,
Roberto Menozzi,
D. Dieci,
L. Cattani,
Fausto Fantini:
Reliability physics of compound semiconductor transistors for microwave applications.
Microelectronics Reliability 41(1): 21-30 (2001) |
| 1 | EE | Wallace T. Anderson,
Roberto Menozzi:
Editorial.
Microelectronics Reliability 41(8): 1101 (2001) |
