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A. Touboul

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2006
10EEF. Essely, F. Darracq, V. Pouget, M. Remmach, Felix Beaudoin, N. Guitard, M. Bafleur, Philippe Perdu, A. Touboul, D. Lewis: Application of various optical techniques for ESD defect localization. Microelectronics Reliability 46(9-11): 1563-1568 (2006)
9EEA. Sozza, A. Curutchet, C. Dua, N. Malbert, N. Labat, A. Touboul: AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements. Microelectronics Reliability 46(9-11): 1725-1730 (2006)
2005
8EEN. Guitard, F. Essely, D. Trémouilles, M. Bafleur, N. Nolhier, Philippe Perdu, A. Touboul, V. Pouget, D. Lewis: Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure. Microelectronics Reliability 45(9-11): 1415-1420 (2005)
7EEN. Ismail, N. Malbert, N. Labat, A. Touboul, J. L. Muraro, F. Brasseau, D. Langrez: Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions. Microelectronics Reliability 45(9-11): 1611-1616 (2005)
2003
6EEA. Curutchet, N. Malbert, N. Labat, A. Touboul, C. Gaquière, A. Minko, M. Uren: Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates. Microelectronics Reliability 43(9-11): 1713-1718 (2003)
5EEJ. C. Martin, C. Maneux, N. Labat, A. Touboul, Muriel Riet, S. Blayac, M. Kahn, Jean Godin: 1/f noise analysis of InP/InGaAs DHBTs submitted to bias and thermal stresses. Microelectronics Reliability 43(9-11): 1725-1730 (2003)
4EEM. Belhaj, C. Maneux, N. Labat, A. Touboul, P. Bove: High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects. Microelectronics Reliability 43(9-11): 1731-1736 (2003)
2002
3EEN. Labat, N. Malbert, B. Lambert, A. Touboul, F. Garat, B. Proust: Degradation mechanisms induced by thermal and bias stresses in InP HEMTs. Microelectronics Reliability 42(9-11): 1575-1580 (2002)
2001
2 D. Lewis, V. Pouget, T. Beauchêne, Hervé Lapuyade, P. Fouillat, A. Touboul, Felix Beaudoin, Philippe Perdu: Front Side and Backside OBIT Mappings applied to Single Event Transient Testing. Microelectronics Reliability 41(9-10): 1471-1476 (2001)
1 B. Lambert, N. Malbert, N. Labat, F. Verdier, A. Touboul, P. Huguet, R. Bonnet, G. Pataut: Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses. Microelectronics Reliability 41(9-10): 1573-1578 (2001)

Coauthor Index

1M. Bafleur [8] [10]
2T. Beauchêne [2]
3Felix Beaudoin [2] [10]
4M. Belhaj [4]
5S. Blayac [5]
6R. Bonnet [1]
7P. Bove [4]
8F. Brasseau [7]
9A. Curutchet [6] [9]
10F. Darracq [10]
11C. Dua [9]
12F. Essely [8] [10]
13P. Fouillat [2]
14C. Gaquière [6]
15F. Garat [3]
16Jean Godin [5]
17N. Guitard [8] [10]
18P. Huguet [1]
19N. Ismail [7]
20M. Kahn [5]
21N. Labat [1] [3] [4] [5] [6] [7] [9]
22B. Lambert [1] [3]
23D. Langrez [7]
24Hervé Lapuyade [2]
25D. Lewis [2] [8] [10]
26N. Malbert [1] [3] [6] [7] [9]
27C. Maneux [4] [5]
28J. C. Martin [5]
29A. Minko [6]
30J. L. Muraro [7]
31N. Nolhier [8]
32G. Pataut [1]
33Philippe Perdu [2] [8] [10]
34V. Pouget [2] [8] [10]
35B. Proust [3]
36M. Remmach [10]
37Muriel Riet [5]
38A. Sozza [9]
39D. Trémouilles [8]
40M. Uren [6]
41F. Verdier [1]

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Copyright © Sun May 17 03:24:02 2009 by Michael Ley (ley@uni-trier.de)