A. Touboul

2006
10	EE	F. Essely, F. Darracq, V. Pouget, M. Remmach, Felix Beaudoin, N. Guitard, M. Bafleur, Philippe Perdu, A. Touboul, D. Lewis: Application of various optical techniques for ESD defect localization. Microelectronics Reliability 46(9-11): 1563-1568 (2006)
9	EE	A. Sozza, A. Curutchet, C. Dua, N. Malbert, N. Labat, A. Touboul: AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements. Microelectronics Reliability 46(9-11): 1725-1730 (2006)
2005
8	EE	N. Guitard, F. Essely, D. Trémouilles, M. Bafleur, N. Nolhier, Philippe Perdu, A. Touboul, V. Pouget, D. Lewis: Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure. Microelectronics Reliability 45(9-11): 1415-1420 (2005)
7	EE	N. Ismail, N. Malbert, N. Labat, A. Touboul, J. L. Muraro, F. Brasseau, D. Langrez: Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions. Microelectronics Reliability 45(9-11): 1611-1616 (2005)
2003
6	EE	A. Curutchet, N. Malbert, N. Labat, A. Touboul, C. Gaquière, A. Minko, M. Uren: Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates. Microelectronics Reliability 43(9-11): 1713-1718 (2003)
5	EE	J. C. Martin, C. Maneux, N. Labat, A. Touboul, Muriel Riet, S. Blayac, M. Kahn, Jean Godin: 1/f noise analysis of InP/InGaAs DHBTs submitted to bias and thermal stresses. Microelectronics Reliability 43(9-11): 1725-1730 (2003)
4	EE	M. Belhaj, C. Maneux, N. Labat, A. Touboul, P. Bove: High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects. Microelectronics Reliability 43(9-11): 1731-1736 (2003)
2002
3	EE	N. Labat, N. Malbert, B. Lambert, A. Touboul, F. Garat, B. Proust: Degradation mechanisms induced by thermal and bias stresses in InP HEMTs. Microelectronics Reliability 42(9-11): 1575-1580 (2002)
2001
2		D. Lewis, V. Pouget, T. Beauchêne, Hervé Lapuyade, P. Fouillat, A. Touboul, Felix Beaudoin, Philippe Perdu: Front Side and Backside OBIT Mappings applied to Single Event Transient Testing. Microelectronics Reliability 41(9-10): 1471-1476 (2001)
1		B. Lambert, N. Malbert, N. Labat, F. Verdier, A. Touboul, P. Huguet, R. Bonnet, G. Pataut: Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses. Microelectronics Reliability 41(9-10): 1573-1578 (2001)

Coauthor Index

1	M. Bafleur	[8] [10]
2	T. Beauchêne	[2]
3	Felix Beaudoin	[2] [10]
4	M. Belhaj	[4]
5	S. Blayac	[5]
6	R. Bonnet	[1]
7	P. Bove	[4]
8	F. Brasseau	[7]
9	A. Curutchet	[6] [9]
10	F. Darracq	[10]
11	C. Dua	[9]
12	F. Essely	[8] [10]
13	P. Fouillat	[2]
14	C. Gaquière	[6]
15	F. Garat	[3]
16	Jean Godin	[5]
17	N. Guitard	[8] [10]
18	P. Huguet	[1]
19	N. Ismail	[7]
20	M. Kahn	[5]
21	N. Labat	[1] [3] [4] [5] [6] [7] [9]
22	B. Lambert	[1] [3]
23	D. Langrez	[7]
24	Hervé Lapuyade	[2]
25	D. Lewis	[2] [8] [10]
26	N. Malbert	[1] [3] [6] [7] [9]
27	C. Maneux	[4] [5]
28	J. C. Martin	[5]
29	A. Minko	[6]
30	J. L. Muraro	[7]
31	N. Nolhier	[8]
32	G. Pataut	[1]
33	Philippe Perdu	[2] [8] [10]
34	V. Pouget	[2] [8] [10]
35	B. Proust	[3]
36	M. Remmach	[10]
37	Muriel Riet	[5]
38	A. Sozza	[9]
39	D. Trémouilles	[8]
40	M. Uren	[6]
41	F. Verdier	[1]

Colors in the list of coauthors