| 2007 |
|---|
| 4 | EE | W. S. Lau,
P. W. Qian,
Taejoon Han,
Nathan P. Sandler,
S. T. Che,
S. E. Ang,
C. H. Tung,
T. T. Sheng:
Evidence that N2O is a stronger oxidizing agent than O2 for both Ta2O5 and bare Si below 1000degreeC and temperature for minimum low-K interfacial oxide for high-K dielectric on Si.
Microelectronics Reliability 47(2-3): 429-433 (2007) |
| 2005 |
|---|
| 3 | EE | F. Palumbo,
G. Condorelli,
S. Lombardo,
K. L. Pey,
C. H. Tung,
L. J. Tang:
Structure of the oxide damage under progressive breakdown.
Microelectronics Reliability 45(5-6): 845-848 (2005) |
| 2003 |
|---|
| 2 | EE | K. L. Pey,
C. H. Tung,
M. K. Radhakrishnan,
L. J. Tang,
Y. Sun,
X. D. Wang,
W. H. Lin:
Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM.
Microelectronics Reliability 43(9-11): 1471-1476 (2003) |
| 2002 |
|---|
| 1 | EE | M. K. Radhakrishnan,
K. L. Pey,
C. H. Tung,
W. H. Lin:
Physical analysis of hard and soft breakdown failures in ultrathin gate oxides.
Microelectronics Reliability 42(4-5): 565-571 (2002) |
